| Cascade pumping of 1.9–3.3 μm type-i quantum well GaSb-based diode lasers L Shterengas, G Kipshidze, T Hosoda, R Liang, T Feng, M Wang, A Stein, ... IEEE Journal of Selected Topics in Quantum Electronics 23 (6), 1-8, 2017 | 52 | 2017 |
| Negative refraction without absorption via quantum coherence AP Fang, W Ge, M Wang, F Li, MS Zubairy Physical Review A 93 (2), 023822, 2016 | 26 | 2016 |
| Electromagnetic chirality-induced negative refraction via atomic coherence F Li, A Fang, M Wang Journal of Physics B: Atomic, Molecular and Optical Physics 42 (19), 195505, 2009 | 25 | 2009 |
| Three stage cascade diode lasers generating 500 mW near 3.2 μm T Hosoda, M Wang, L Shterengas, G Kipshidze, G Belenky Applied Physics Letters 107 (11), 2015 | 20 | 2015 |
| Cascade type-I quantum well GaSb-based diode lasers L Shterengas, G Kipshidze, T Hosoda, M Wang, T Feng, G Belenky Photonics 3 (2), 27, 2016 | 18 | 2016 |
| Wavelength-tunable, GaSb-based, cascaded type-I quantum-well laser emitting over a range of 300 nm NB Chichkov, A Yadav, E Zherebtsov, M Wang, G Kipshidze, G Belenky, ... IEEE Photonics Technology Letters 30 (22), 1941-1943, 2018 | 9 | 2018 |
| External cavity cascade diode lasers tunable from 3.05 to 3.25 M Wang, T Hosoda, L Shterengas, G Kipshidze, M Lu, A Stein, G Belenky Optical Engineering 57 (1), 011012-011012, 2018 | 9 | 2018 |
| External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm M Wang, T Hosoda, J Jiang, L Shterengas, G Kipshidze, A Stein, T Feng, ... Optics Letters 43 (18), 4473-4476, 2018 | 7 | 2018 |
| Type-I QW cascade diode lasers for spectral region above 3 um L Shterengas, T Hosoda, M Wang, T Feng, G Kipshidze, G Belenky Novel In-Plane Semiconductor Lasers XV 9767, 976703, 2016 | 6 | 2016 |
| Low-cost 400 Gbps DR4 silicon photonics transmitter for short-reach datacenter application H Zhu, S Anderson, N Karfelt, L Jiang, Y Li, R Boeck, H Yamazaki, ... Nanomaterials 11 (8), 1941, 2021 | 5 | 2021 |
| High-power 1.9-3.3-um type-I quantum-well cascade diode lasers L Shterengas, T Hosoda, M Wang, T Feng, G Kipshidze, G Belenky Novel In-Plane Semiconductor Lasers XVI 10123, 83-91, 2017 | 3 | 2017 |
| Narrow Ridge Cascade Diode Lasers with λ> 3 µm M Wang, T Hosada, L Shterengas, A Stein, M Lu, G Kipshidze, G Belenky CLEO: Science and Innovations, STh3L. 2, 2016 | 2 | 2016 |
| Controlling entanglement dynamics of two qubits coupled to a common reservoir via a coherent field SRJ Patrick, F Li, M Wang, Y Yang Journal of Modern Optics 57 (4), 295-302, 2010 | 2 | 2010 |
| Wavelength-tunable cascade type-I quantum-well GaSb-based diode laser at 3.2 μm NB Chichkov, A Yadav, E Zherebtsov, L Shterengas, M Wang, ... 2018 International Conference Laser Optics (ICLO), 137-137, 2018 | | 2018 |
| External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm M Wang, T Feng, T Hosoda, G Kipshidze, J Jiang, L Shterengas, ... CLEO: Science and Innovations, SF2G. 6, 2018 | | 2018 |
| Passive mode-locking of 3.25 um GaSb-based type-I quantum-well cascade diode lasers T Feng, L Shterengas, G Kipshidze, T Hosoda, M Wang, G Belenky Novel In-Plane Semiconductor Lasers XVII 10553, 145-153, 2018 | | 2018 |
| GaSb-based Type-I Quantum Well Tunable Diode Lasers for Spectral Range above 3 µm M Wang State University of New York at Stony Brook, 2018 | | 2018 |
| 1.9–3.3 μm Type-I quantum-well cascade diode lasers L Shterengas, T Hosoda, G Kipshidze, T Feng, M Wang, G Belenky 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 185-186, 2017 | | 2017 |
| Narrow ridge GaSb‐based cascade diode lasers fabricated by methane–hydrogen reactive ion etching M Wang, T Hosoda, L Shterengas, G Kipshidze, DJ Hwang, G Belenky Electronics Letters 53 (1), 40-42, 2017 | | 2017 |
