| Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices AEH Khediri, B Benbakhti, JC Gerbedoen, H Maher, A Jaouad, ... Applied Physics Letters 121 (12), 122103, 2022 | 7 | 2022 |
| A cost-effective technology to improve power performance of nanoribbons GaN HEMTs A Soltani, B Benbakhti, JC Gerbedoen, A Khediri, H Maher, JP Salvestrini, ... Applied Physics Letters 120 (4), 2022 | 2 | 2022 |
| Impact of III-nitride/Si interface preconditioning on breakdown voltage in GaN-on-silicon HEMT A Khediri, A Talbi, A Jaouad, H Maher, A Soltani Micromachines 12 (11), 1284, 2021 | 2 | 2021 |
| Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode AH Khediri, A Talbi, MA Benamara, Z Benamara Journal of Nano-and Electronic Physics 13 (4), 2021 | 2 | 2021 |
| 3C-SiC enhances the GaN HEMT AEH Khediri, B Benbakhti, JC Gerbedoen, A Jouad, H Maher, ... Appl. Phys. Lett., 2023 | | 2023 |
| Etude des nanostructures à base de nitrures des semiconducteurs III-V-Caractérisations électriques et analyses surfaciques associées AEH KHEDIRI, A TALBI | | 2022 |
| Etude de nanostructures à base de semi-conducteurs III-V nitrurés–caractérisations électriques et analyse surfacique associées AEH KHEDIRI Université de Sidi Bel Abbès-Djillali Liabes, 0 | | |
Soltani AliAssociate professorVerified email at univ-lille.fr
