Formation of monolayer graphene by annealing sacrificial nickel thin films AJ Pollard, RR Nair, SN Sabki, CR Staddon, LMA Perdigao, CH Hsu, ... The Journal of Physical Chemistry C 113 (38), 16565-16567, 2009 | 88 | 2009 |
Graphene Formation by Decomposition of C60 LMA Perdigão, SN Sabki, JM Garfitt, P Capiod, PH Beton The Journal of Physical Chemistry C 115 (15), 7472-7476, 2011 | 37 | 2011 |
The physics of tsunami: basic understanding of the Indian Ocean disaster MNA Halif, SN Sabki American Journal of Applied Sciences 2 (8), 1188-1193, 2005 | 18 | 2005 |
The Effect of Different Dielectric Materials in Designing High Performance Metal-Insulator-Metal (MIM) Capacitors. MA Zulkifeli, SN Sabki, S Taking, NA Azmi, SS Jamuar International Journal of Electrical & Computer Engineering (2088-8708) 7 (3), 2017 | 8 | 2017 |
Ferroelectric and relaxor ferroelectric to paralectric transition based on lead magnesium niobate (PMN) materials RAM Osman, MS Idris, ZA Zahid Jamal, S Taking, SN Sabki, P Poopalan, ... Advanced Materials Research 795, 658-663, 2013 | 6 | 2013 |
tt, S. Gangopadhyay, HF Gleeson, AK Geim and PH Beton AJ Pollard, RR Nair, SN Sabki, CR Staddon, LMA Perdigao, CH Hsu, ... J. Phys. Chem. C 113, 16565-16567, 2009 | 5 | 2009 |
Graphene transfer process and optimization of graphene coverage SN Sabki, SH Shamsuri, SF Fauzi, ML Chon-Ki, N Othman EPJ Web of Conferences 162, 01049, 2017 | 4 | 2017 |
Impact of different mobility models on 32nm node UTBB SOI MOSFETs N Othman, MK Md Arshad, SN Sabki, U Hashim Advanced Materials Research 1109, 88-93, 2015 | 4 | 2015 |
Two stage CMOS operational amplifier in 0.13 μm technology using pseudo cascode compensation HT Cheah, N Ahmad, N Othman, SN Sabki AIP Conference Proceedings 2045 (1), 2018 | 3 | 2018 |
Aligned Carbon Nanofibres (CNFs) at the Graphene/Nickel Thin Film Edge MSH Shamsuri, SN Sabki, AH Norzilah, MN Najwa, AN Edzatty, ... Applied Mechanics and Materials 815, 212-215, 2015 | 3 | 2015 |
Ultra-thin body and buried oxide (UTBB) SOI MOSFETs on suppression of short-channel effects (SCEs): a review N Othman, MK Md Arshad, SN Sabki, U Hashim Advanced Materials Research 1109, 257-261, 2015 | 3 | 2015 |
Performance Analysis of JL-FinFET with Varied Non-Uniform Doping Concentrations, Fin Height and Fin Width using Device Simulator MH Hariff, N Othman, SN Sabki, AF Abd Rahim International Journal of Nanoelectronics & Materials 16 (1), 2023 | 1 | 2023 |
Progression in the Growth of Cylindric Nanostructures: Carbon Nanotubes (CNTs) and Carbon Nanofibers (CNFs) on Graphene. SN Sabki, AH Norzilah, HA Hanafi, MA Idris, N Othman, MNA Halif, ... International Journal of Nanoelectronics & Materials 15, 2022 | 1 | 2022 |
Performance Analysis of a Double-Gate Junctionless Transistor with Varied Doping and Gate Underlap using Device Simulator NNA Nasir, N Othman, SN Sabki, AF Abd Rahim 2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO …, 2021 | 1 | 2021 |
Synthesis of Carbon Nanotubes with Unintentional Secondary Growth of Carbon Nanofibers on Graphene MNZ Mohamad, SN Sabki, N Othman, NA Halif, MSH Shamsuri, N Sabani 2021 IEEE International Conference on Sensors and Nanotechnology (SENNANO …, 2021 | 1 | 2021 |
Correlation between crystal structure and thermal reaction of TiO2-Graphene Oxide SK Kamarudin, MA Idris, NFM Yunos, J Banjuraizah, LN Ho, SN Sabki, ... International Journal of Nanoelectronics & Materials 14 (2), 2021 | 1 | 2021 |
Improving Material Quality of Polycrystalline GaN by Manipulating the Etching Time of a Porous AlN Template M Ikram Md Taib, N Munirah, SN Waheeda, A Shuhaimi, SN Sabki, ... Journal of Electronic Materials 48, 3547-3553, 2019 | 1 | 2019 |
Effect on different geometric dimensions of metal-oxide-semiconductor capacitor by using tcad simulation MA Zulkifeli, SN Sabki, SS Jamuar, S Taking, NA Azmi 2016 3rd International Conference on Electronic Design (ICED), 44-47, 2016 | 1 | 2016 |
Impact of silicon-body thickness on emulation of double-gate UTBB SOI MOSFETs with different ground plane structures N Othman, MKM Arshad, SN Sabki, U Hashim 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 1-4, 2015 | 1 | 2015 |
Impact of high-k dielectric on the digital and analog performance on emulation of double-gate UTBB SOI MOSFETs with different ground plane structures N Othman, MKM Arshad, SN Sabki, U Hashim 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 1-4, 2015 | 1 | 2015 |