| Sub-0.5 nm interfacial dielectric enables superior electrostatics: 65 mV/dec top-gated carbon nanotube FETs at 15 nm gate length G Pitner, Z Zhang, Q Lin, SK Su, C Gilardi, C Kuo, H Kashyap, T Weiss, ... 2020 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2020 | 16 | 2020 |
| Emergence of distinct electronic states in epitaxially-fused PbSe quantum dot superlattices MS Kavrik, JA Hachtel, W Ko, C Qian, A Abelson, EB Unlu, H Kashyap, ... Nature communications 13 (1), 6802, 2022 | 9 | 2022 |
| Sub-nanometer interfacial oxides on highly oriented pyrolytic graphite and carbon nanotubes enabled by lateral oxide growth Z Zhang, M Passlack, G Pitner, CH Kuo, ST Ueda, J Huang, H Kashyap, ... ACS Applied Materials & Interfaces 14 (9), 11873-11882, 2022 | 8 | 2022 |
| Remote oxygen scavenging of the interfacial oxide layer in ferroelectric hafnium–zirconium oxide-based metal–oxide–semiconductor structures N Tasneem, H Kashyap, K Chae, C Park, P Lee, SF Lombardo, N Afroze, ... ACS Applied Materials & Interfaces 14 (38), 43897-43906, 2022 | 7 | 2022 |
| Low-Resistivity Titanium Nitride Thin Films Fabricated by Atomic Layer Deposition with TiCl4 and Metal–Organic Precursors in Horizontal Vias CH Kuo, AJ Mcleod, PC Lee, J Huang, H Kashyap, V Wang, SUK Yun, ... ACS Applied Electronic Materials 5 (8), 4094-4102, 2023 | 4 | 2023 |
| Gallium phosphide conformal film growth on in-situ tri-TBP dry-cleaned InGaP/GaAs using atomic hydrogen ALD SU Yun, PC Lee, CH Kuo, AJ Mcleod, Z Zhang, V Wang, J Huang, ... Vacuum 220, 112806, 2024 | 2 | 2024 |
| Plasma enhanced atomic layer deposition of crystallized gallium phosphide on Si with tri-Ethylgallium and tri-tert-Butylphosphine SU Yun, CH Kuo, PC Lee, ST Ueda, V Wang, H Kashyap, AJ Mcleod, ... Applied Surface Science 619, 156727, 2023 | 1 | 2023 |
| High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at VDS of 0.75 V by self-aligned doping in sub-20 nm spacer S Li, TA Chao, C Gilardi, N Safron, SK Su, G Zeevi, AD Bechdolt, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| Interfacial Oxide Layer Scavenging in Ferroelectric Hf0. 5Zr0. 5O2-Based MOS Structures With Ge Channel for Reduced Write Voltages C Park, H Kashyap, D Das, J Hur, N Tasneem, S Lombardo, N Afroze, ... IEEE Transactions on Electron Devices 70 (8), 4479-4483, 2023 | | 2023 |
| Interfacial Oxide Layer Scavenging in Ferroelectric HfZrO-Based MOS Structures With Ge Channel for Reduced Write Voltages C Park, H Kashyap, D Das, J Hur, N Tasneem, S Lombardo, N Afroze, ... IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Ultra High-k HfZrO4 Thin Films Grown by Atomic Layer Deposition using Metal-Organic and Brute HOOH precursors H Kashyap, M Benham, J Spiegelman, A Kummel 2023 International VLSI Symposium on Technology, Systems and Applications …, 2023 | | 2023 |
| Atomic and Electronic Structure of Epitaxial Necking in Quantum Dot Super Lattice MS KAVRIK, W Ko, J Hachtel, C Qian, A Abelson, H Kashyap, S Ueda, ... Bulletin of the American Physical Society 65, 2020 | | 2020 |
