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Mudassar Imam Yahya Meer
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Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs
YK Yadav, BB Upadhyay, M Meer, N Bhardwaj, S Ganguly, D Saha
IEEE Electron Device Letters 40 (1), 67-70, 2018
402018
Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTs
A Rawat, M Meer, V kumar Surana, N Bhardwaj, V Pendem, ...
IEEE Transactions on Electron Devices 65 (9), 3725-3731, 2018
402018
Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a Dielectric
A Rawat, VK Surana, M Meer, N Bhardwaj, S Ganguly, D Saha
IEEE Transactions on Electron Devices 66 (6), 2557-2562, 2019
222019
Reduced contact resistance and improved transistor performance by surface plasma treatment on ohmic regions in AlGaN/GaN HEMT heterostructures
YK Yadav, BB Upadhyay, M Meer, S Ganguly, D Saha
physica status solidi (a) 215 (9), 1700656, 2018
182018
Modified angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates
S Emekar, J Jha, S Mukherjee, M Meer, K Takhar, D Saha, S Ganguly
2017 International Conference on Simulation of Semiconductor Processes and …, 2017
132017
Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts
K Takhar, SA Kumar, M Meer, BB Upadhyay, P Upadhyay, D Khachariya, ...
Solid-State Electronics 122, 70-74, 2016
102016
Improved Ohmic contact to GaN and AlGaN/GaN two‐dimensional electron gas using trap assisted tunneling by B implantation
P Upadhyay, M Meer, K Takhar, D Khachariya, A Kumar S, D Banerjee, ...
physica status solidi (b) 252 (5), 989-995, 2015
92015
Impact of wet-oxidized Al2O3/AlGaN interface on AlGaN/GaN 2-DEGs
M Meer, S Majety, K Takhar, S Ganguly, D Saha
Semiconductor Science and Technology 32 (4), 04LT02, 2017
82017
Interface dynamics in ohmic contact optimization on AlGaN/GaN heterostructure by the formation of TiN
M Meer, A Rawat, K Takhar, S Ganguly, D Saha
Microelectronic Engineering 219, 111144, 2020
72020
Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors
K Takhar, M Meer, BB Upadhyay, S Ganguly, D Saha
Solid-State Electronics 131, 39-44, 2017
72017
Fringe field control of one‐dimensional room temperature sub‐band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires
AS Kumar, D Khachariya, M Meer, S Ganguly, D Saha
physica status solidi (a) 214 (2), 1600620, 2017
52017
Off-state degradation and recovery in Oxide/AlGaN/GaN heterointerfaces: importance of band offset, electron, and hole trapping
J Jha, M Meer, S Ganguly, D Saha
ACS Applied Electronic Materials 2 (7), 2071-2077, 2020
22020
Performance improvement in NiO x-based GaN MOS-HEMTs
M Meer, P Pohekar, B Parvez, S Ganguly, D Saha
Semiconductor Science and Technology 37 (8), 085007, 2022
12022
Interfaces and Interphases in Electrochemical Energy Storage and Conversion
JA Dillen, Y Shao, Materials Research Society Warrendale United States
2017
Fringe field control of one‐dimensional room temperature sub‐band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires (Phys. Status Solidi A 2∕ 2017)
AS Kumar, D Khachariya, M Meer, S Ganguly, D Saha
physica status solidi (a) 214 (2), 1770107, 2017
2017
Fringe field control of one-dimensional room temperature quantum transport in site controlled AlGaN/GaN lateral nanowires
KS Akhil, D Khachariya, M Meer, S Ganguly, D Saha
arXiv preprint arXiv:1606.02564, 2016
2016
2015 Materials Research Society Spring Meeting
J Narayan, JA Dillen
2016
Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions
K Takhar, M Meer, D Khachariya, S Ganguly, D Saha
Journal of Vacuum Science & Technology A 33 (5), 2015
2015
High performance AlGaN/GaN high electron mobility transistors
YK Yadav, BB Upadhyay, M Meer, D Saha
Improved Ohmic Contacts by Surface Treatment on AlGaN/GaN heterostructures
YK Yadav, M Meer, BB Upadhyay, D Saha
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