| Non-volatile clocked spin wave interconnect for beyond-CMOS nanomagnet pipelines S Dutta, SC Chang, N Kani, DE Nikonov, S Manipatruni, IA Young, ... Scientific reports 5 (1), 9861, 2015 | 84 | 2015 |
| Physical origin of transient negative capacitance in a ferroelectric capacitor SC Chang, UE Avci, DE Nikonov, S Manipatruni, IA Young Physical Review Applied 9 (1), 014010, 2018 | 71 | 2018 |
| Circuit simulation of magnetization dynamics and spin transport P Bonhomme, S Manipatruni, RM Iraei, S Rakheja, SC Chang, ... IEEE Transactions on Electron Devices 61 (5), 1553-1560, 2014 | 56 | 2014 |
| Impact of dimensional scaling and size effects on spin transport in copper and aluminum interconnects S Rakheja, SC Chang, A Naeemi IEEE transactions on electron devices 60 (11), 3913-3919, 2013 | 45 | 2013 |
| Design and analysis of Si interconnects for all-spin logic SC Chang, S Manipatruni, DE Nikonov, IA Young, A Naeemi IEEE Transactions on Magnetics 50 (9), 1-13, 2014 | 39 | 2014 |
| Design and analysis of copper and aluminum interconnects for all-spin logic SC Chang, RM Iraei, S Manipatruni, DE Nikonov, IA Young, A Naeemi IEEE Transactions on Electron Devices 61 (8), 2905-2911, 2014 | 38 | 2014 |
| Impact of oxygen vacancy content in ferroelectric HZO films on the device performance T Mittmann, M Materano, SC Chang, I Karpov, T Mikolajick, U Schroeder 2020 IEEE International Electron Devices Meeting (IEDM), 18.4. 1-18.4. 4, 2020 | 35 | 2020 |
| Theoretical approach to electroresistance in ferroelectric tunnel junctions SC Chang, A Naeemi, DE Nikonov, A Gruverman Physical Review Applied 7 (2), 024005, 2017 | 35 | 2017 |
| A thermodynamic perspective of negative-capacitance field-effect transistors SC Chang, UE Avci, DE Nikonov, IA Young IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 3 …, 2017 | 32 | 2017 |
| 3d-ferroelectric random access memory (3d-fram) S Shivaraman, SC Chang, AV Penumatcha, N Haratipour, UE Avci US Patent App. 16/599,422, 2021 | 27 | 2021 |
| Asymmetric Metal/α-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction M Si, Z Zhang, SC Chang, N Haratipour, D Zheng, J Li, UE Avci, PD Ye ACS nano 15 (3), 5689-5695, 2021 | 23 | 2021 |
| Anti-ferroelectric HfxZr1-xO2 Capacitors for High-density 3-D Embedded-DRAM SC Chang, N Haratipour, S Shivaraman, TL Brown-Heft, J Peck, CC Lin, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.1. 1-28.1. 4, 2020 | 23 | 2020 |
| A model study of an error-free magnetization reversal through dipolar coupling in a two-magnet system N Kani, SC Chang, S Dutta, A Naeemi IEEE Transactions on Magnetics 52 (2), 1-12, 2015 | 17 | 2015 |
| Interconnects for all-spin logic using automotion of domain walls SC Chang, S Dutta, S Manipatruni, DE Nikonov, IA Young, A Naeemi IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 16 | 2015 |
| FeRAM using anti-ferroelectric capacitors for high-speed and high-density embedded memory SC Chang, N Haratipour, S Shivaraman, C Neumann, S Atanasov, J Peck, ... 2021 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2021 | 14 | 2021 |
| Scaling limits on all-spin logic SC Chang, N Kani, S Manipatruni, DE Nikonov, IA Young, A Naeemi IEEE Transactions on Magnetics 52 (7), 1-4, 2016 | 14 | 2016 |
| Clocked domain wall logic using magnetoelectric effects SC Chang, S Manipatruni, DE Nikonov, IA Young IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 2 …, 2016 | 13 | 2016 |
| Temperature-Oriented Mobility Measurement and Simulation to Assess Surface Roughness in Ultrathin-Gate-Oxide (1 nm) nMOSFETs and Its TEM Evidence MJ Chen, LM Chang, SJ Kuang, CW Lee, SH Hsieh, CA Wang, SC Chang, ... IEEE transactions on electron devices 59 (4), 949-955, 2012 | 13 | 2012 |
| Understanding the switching mechanisms of the antiferromagnet/ferromagnet heterojunction YC Liao, DE Nikonov, S Dutta, SC Chang, CS Hsu, IA Young, A Naeemi Nano Letters 20 (11), 7919-7926, 2020 | 12 | 2020 |
| Inversion Charge-boost and Transient Steep-slope induced by Free charge-polarization Mismatch in a Ferroelectric-metal-oxide-semiconductor Capacitor SC Chang, UE Avci, DE Nikonov, IA Young IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 4 …, 2018 | 10 | 2018 |
Uygar E. AvciComponents Research, Intel Corp.Verified email at intel.com
