| Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing D Kuzum, RGD Jeyasingh, B Lee, HSP Wong Nano letters 12 (5), 2179-2186, 2012 | 1324 | 2012 |
| An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation S Yu, Y Wu, R Jeyasingh, D Kuzum, HSP Wong IEEE Transactions on Electron Devices 58 (8), 2729-2737, 2011 | 882 | 2011 |
| Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array SB Eryilmaz, D Kuzum, R Jeyasingh, SB Kim, M BrightSky, C Lam, ... Frontiers in neuroscience 8, 205, 2014 | 228 | 2014 |
| Ultrafast characterization of phase-change material crystallization properties in the melt-quenched amorphous phase R Jeyasingh, SW Fong, J Lee, Z Li, KW Chang, D Mantegazza, M Asheghi, ... Nano letters 14 (6), 3419-3426, 2014 | 135 | 2014 |
| Low-energy robust neuromorphic computation using synaptic devices D Kuzum, RGD Jeyasingh, S Yu, HSP Wong IEEE Transactions on Electron Devices 59 (12), 3489-3494, 2012 | 101 | 2012 |
| An ultra-low reset current cross-point phase change memory with carbon nanotube electrodes J Liang, RGD Jeyasingh, HY Chen, HSP Wong IEEE Transactions on Electron Devices 59 (4), 1155-1163, 2012 | 99 | 2012 |
| Nanoscale phase change memory materials MA Caldwell, RGD Jeyasingh, HSP Wong, DJ Milliron Nanoscale 4 (15), 4382-4392, 2012 | 79 | 2012 |
| Energy efficient programming of nanoelectronic synaptic devices for large-scale implementation of associative and temporal sequence learning D Kuzum, RGD Jeyasingh, HSP Wong 2011 International Electron Devices Meeting, 30.3. 1-30.3. 4, 2011 | 77 | 2011 |
| Electronic and optical switching of solution-phase deposited SnSe2 phase change memory material RY Wang, MA Caldwell, RGD Jeyasingh, S Aloni, RM Shelby, HSP Wong, ... Journal of Applied Physics 109 (11), 2011 | 72 | 2011 |
| A 1.4 ľA reset current phase change memory cell with integrated carbon nanotube electrodes for cross-point memory application J Liang, RGD Jeyasingh, HY Chen, HSP Wong 2011 Symposium on VLSI Technology-Digest of Technical Papers, 100-101, 2011 | 62 | 2011 |
| Experimental demonstration of array-level learning with phase change synaptic devices SB Eryilmaz, D Kuzum, RGD Jeyasingh, SB Kim, M BrightSky, C Lam, ... 2013 IEEE International Electron Devices Meeting, 25.5. 1-25.5. 4, 2013 | 60 | 2013 |
| Adaptive keeper design for dynamic logic circuits using rate sensing technique RGD Jeyasingh, N Bhat, B Amrutur IEEE Transactions on Very Large Scale Integration (VLSI) Systems 19 (2), 295-304, 2009 | 60 | 2009 |
| Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO S Yu, R Jeyasingh, Y Wu, HSP Wong Physical Review B—Condensed Matter and Materials Physics 85 (4), 045324, 2012 | 57 | 2012 |
| Ultrafast terahertz-induced response of GeSbTe phase-change materials MJ Shu, P Zalden, F Chen, B Weems, I Chatzakis, F Xiong, R Jeyasingh, ... Applied Physics Letters 104 (25), 2014 | 48 | 2014 |
| AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory S Yu, R Jeyasingh, Y Wu, HS Philip Wong Applied Physics Letters 99 (23), 2011 | 44 | 2011 |
| Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis S Yu, R Jeyasingh, Y Wu, HSP Wong 2011 International Electron Devices Meeting, 12.1. 1-12.1. 4, 2011 | 39 | 2011 |
| One-Dimensional Thickness Scaling Study of Phase Change Material Using a Pseudo 3-Terminal Device SB Kim, BJ Bae, Y Zhang, RGD Jeyasingh, Y Kim, IG Baek, S Park, ... IEEE Transactions on Electron Devices 58 (5), 1483-1489, 2011 | 31 | 2011 |
| Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM) HSP Wong, SB Kim, B Lee, MA Caldwell, J Liang, Y Wu, RGD Jeyasingh, ... 2010 10th IEEE International Conference on Solid-State and Integrated …, 2010 | 27 | 2010 |
| Microthermal stage for electrothermal characterization of phase-change memory J Lee, SB Kim, R Jeyasingh, M Asheghi, HSP Wong, KE Goodson IEEE electron device letters 32 (7), 952-954, 2011 | 26 | 2011 |
| Grain boundaries, phase impurities, and anisotropic thermal conduction in phase-change memory Z Li, J Lee, JP Reifenberg, M Asheghi, RGD Jeyasingh, HSP Wong, ... IEEE electron device letters 32 (7), 961-963, 2011 | 23 | 2011 |
