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Jin Luo
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Capacitor-less stochastic leaky-FeFET neuron of both excitatory and inhibitory connections for SNN with reduced hardware cost
J Luo, L Yu, T Liu, M Yang, Z Fu, Z Liang, L Chen, C Chen, S Liu, S Wu, ...
2019 IEEE International Electron Devices Meeting (IEDM), 6.4. 1-6.4. 4, 2019
512019
A novel ferroelectric FET-based adaptively-stochastic neuron for stimulated-annealing based optimizer with ultra-low hardware cost
J Luo, T Liu, Z Fu, X Wei, M Yang, L Chen, Q Huang, R Huang
IEEE Electron Device Letters 43 (2), 308-311, 2021
142021
Energy-and area-efficient Fe-FinFET-based time-domain mixed-signal computing in memory for edge machine learning
J Luo, W Xu, Y Du, B Fu, J Song, Z Fu, M Yang, Y Li, L Ye, Q Huang, ...
2021 IEEE International Electron Devices Meeting (IEDM), 19.5. 1-19.5. 4, 2021
132021
A novel ambipolar ferroelectric tunnel FinFET based content addressable memory with ultra-low hardware cost and high energy efficiency for machine learning
J Luo, W Xu, B Fu, Z Yu, M Yang, Y Li, Q Huang, R Huang
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
122022
A biomimetic tunnel FET-based spiking neuron for energy-efficient neuromorphic computing with reduced hardware cost
J Luo, C Chen, Q Huang, R Huang
IEEE Transactions on Electron Devices 69 (2), 882-886, 2021
62021
A novel leaky-FeFET based true random number generator with ultralow hardware cost for neuromorphic application
T Liu, J Luo, X Wei, Q Huang, R Huang
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
42021
A Physical Current Model for Self-Depleted T-gate Schottky Barrier Tunneling FET with Low SS and High ION/IOFF
J Luo, Z Lv, QQ Huang, C Chen, R Huang
2018 14th Ieee International Conference on Solid-State and Integrated …, 2018
32018
First Demonstration of Hafnia-based Selector-Free FeRAM with High Disturb Immunity through Design Technology Co-Optimization
Z Fu, S Cao, H Zheng, J Luo, Q Huang, R Huang
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
22023
A Novel Small-Signal Ferroelectric Capacitance based Content Addressable Memory for Area-and Energy-Efficient Lifelong Learning
W Xu, Z Fu, K Wang, C Su, J Luo, Z Chen, Q Huang, R Huang
IEEE Electron Device Letters, 2023
22023
Novel ferroelectric tunnel FinFET based encryption-embedded computing-in-memory for secure AI with high area-and energy-efficiency
J Luo, H Shao, B Fu, Z Fu, W Xu, K Wang, M Yang, Y Li, X Lv, Q Huang, ...
2022 International Electron Devices Meeting (IEDM), 36.5. 1-36.5. 4, 2022
22022
Device modeling and application simulation of ferroelectric-FETS with dynamic multi-domain behavior
Z Fu, C Chen, J Luo, Q Huang, R Huang
2020 China Semiconductor Technology International Conference (CSTIC), 1-4, 2020
22020
A Novel Pulse-Width-Modulated FeFET-based Analog Content Addressable Memory with High Area-and Energy-Efficiency
W Xu, J Luo, Q Huang, R Huang
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
12023
Novel Energy-efficient Hafnia-based Ferroelectric Processing-in-Sensor with in-situ Motion Detection and Four-quarter Mutipilcation
Z Fu, K Wang, B Fu, S Xu, H Zheng, J Luo, C Su, W Xu, X Lv, Q Huang, ...
2022 International Electron Devices Meeting (IEDM), 24.5. 1-24.5. 4, 2022
12022
Novel Negative-Feedback Method for Writing Variation Suppression in FeFET-Based Computing-in-Memory Macro
W Xu, J Luo, Y Du, Q Huang, R Huang
2022 China Semiconductor Technology International Conference (CSTIC), 1-3, 2022
12022
Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAM
Z Fu, S Cao, H Zheng, J Luo, Q Huang, R Huang
IEEE Transactions on Electron Devices, 2024
2024
Method for implementing adaptive stochastic spiking neuron based on ferroelectric field effect transistor
Ru Huang, Jin Luo, Tianyi Liu, Qianqian Huang
US Patent US 11,868,868 B2, 2024
2024
Energy-efficient Ferroelectric-FET-based Agent with Memory Trace for Enhanced Reinforcement Learning
J Luo, B Fu, Y Du, X Wei, C Su, M Yang, Q Huang, R Huang
IEEE Electron Device Letters, 2023
2023
Design of Ferroelectric FET-Based Capacitive-Coupling Computing-In-Memory For Binary Neural Networks
B Fu, J Luo, W Xu, Q Huang, R Huang
2023 China Semiconductor Technology International Conference (CSTIC), 1-4, 2023
2023
A Compact Model of Non-Volatile Ferroelectric Tunnel Fet with Ambipolarity for in-Memory-Computing Based Edge AI
H Shao, J Luo, Z Fu, Q Huang, R Huang
2023 China Semiconductor Technology International Conference (CSTIC), 1-4, 2023
2023
A Novel Ferroelectric Tunnel FET-based Time-Domain Content Addressable Memory with High Distance-Metric Linearity and Energy Efficiency for Edge Machine Learning
W Xu, J Luo, Q Huang, R Huang
2023 Silicon Nanoelectronics Workshop (SNW), 7-8, 2023
2023
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