| Crystalline interlayers for reducing the effective thermal boundary resistance in GaN-on-diamond DE Field, JA Cuenca, M Smith, SM Fairclough, FCP Massabuau, ... ACS Applied Materials & Interfaces 12 (48), 54138-54145, 2020 | 43 | 2020 |
| Structural and optical properties of Ga auto-incorporated InAlN epilayers E Taylor, MD Smith, TC Sadler, K Lorenz, HN Li, E Alves, PJ Parbrook, ... Journal of Crystal Growth 408, 97-101, 2014 | 32 | 2014 |
| Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD MD Smith, E Taylor, TC Sadler, VZ Zubialevich, K Lorenz, HN Li, ... Journal of Materials Chemistry C 2 (29), 5787-5792, 2014 | 32 | 2014 |
| Thermal stress modelling of diamond on GaN/III-Nitride membranes JA Cuenca, MD Smith, DE Field, FCP Massabuau, S Mandal, J Pomeroy, ... Carbon 174, 647-661, 2021 | 29 | 2021 |
| GaN-on-diamond technology platform: Bonding-free membrane manufacturing process MD Smith, JA Cuenca, DE Field, Y Fu, C Yuan, F Massabuau, S Mandal, ... AIP Advances 10 (3), 2020 | 23 | 2020 |
| Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope C Trager-Cowan, A Alasmari, W Avis, J Bruckbauer, PR Edwards, ... Semiconductor Science and Technology 35 (5), 054001, 2020 | 13 | 2020 |
| Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN MD Smith, X Li, MJ Uren, IG Thayne, M Kuball Applied Surface Science 521, 146297, 2020 | 11 | 2020 |
| The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films C Trager-Cowan, A Alasmari, W Avis, J Bruckbauer, PR Edwards, ... Photonics Research, 2019 | 11 | 2019 |
| Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation MD Smith, D Thomson, VZ Zubialevich, H Li, G Naresh‐Kumar, ... physica status solidi (a) 214 (1), 1600353, 2017 | 8 | 2017 |
| A comparison of the 60Co gamma radiation hardness, breakdown characteristics and the effect of SiNx capping on InAlN and AlGaN HEMTs for space applications MD Smith, D O’Mahony, F Vitobello, M Muschitiello, A Costantino, ... Semiconductor Science and Technology 31 (2), 025008, 2015 | 7 | 2015 |
| InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy MD Smith, D O'Mahony, M Conroy, M Schmidt, PJ Parbrook Applied Physics Letters 107 (11), 2015 | 7 | 2015 |
| The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures MD Smith, TC Sadler, H Li, VZ Zubialevich, PJ Parbrook Applied Physics Letters 103 (8), 2013 | 7 | 2013 |
| Development of InAlN HEMTs for space application MD Smith University College Cork, 2016 | 4 | 2016 |
| Dielectric thickness and fin width dependent OFF-state degradation in AlGaN/GaN SLCFETs AS Kumar, MJ Uren, MD Smith, M Kuball, J Parke, HG Henry, RS Howell 2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023 | 3 | 2023 |
| High mobility in GaN MOSFETs with AlSiO gate dielectric and AlN mobility enhancement layer MD Smith, Y Kajiwara, H Ono, PC Huang, D Kato, A Mukai, A Shindome, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 2 | 2021 |
| Semiconductor device and method of manufacturing the same MD Smith, H Ono, Y Kajiwara, A Mukai, M Kuraguchi US Patent 11,563,114, 2023 | 1 | 2023 |
| Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements AK Bhat, HS Kim, A Mishra, MD Smith, MJ Uren, M Kuball Journal of Applied Physics 135 (19), 2024 | | 2024 |
| Turn-On Voltage Instability of -GaO Trench Schottky Barrier Diodes With Different Fin Channel Orientations HS Kim, AK Bhat, MD Smith, M Kuball IEEE Transactions on Electron Devices, 2024 | | 2024 |
| GaN multichannel devices with latch-induced sub-60 mV/decade subthreshold slope. M Kuball, AK Shaji, S Dalcanale, M Uren, J Pomeroy, M Smith, J Parke, ... | | 2024 |
| Extraction of Sub-threshold Mobility in Ga2O3 Lateral Transistors from AC Conductance A Mishra, MJ Uren, MD Smith, Z Chen, AK Bhat, M Higashiwaki, M Kuball IEEE Electron Device Letters, 2023 | | 2023 |
Martin KuballUniversity of BristolVerified email at bristol.ac.uk
