| Study of high Al fraction in AlGaN barrier HEMT and GaN and InGaN channel HEMT with In0.17Al0.83N barrier K Sinha, SK Dubey, A Islam Microsystem Technologies 26, 2145-2158, 2020 | 17 | 2020 |
| Characterization of AlGaN/GaN based HEMT for low noise and high frequency application SK Dubey, M Mishra, A Islam International Journal of Numerical Modelling: Electronic Networks, Devices …, 2022 | 16 | 2022 |
| Characterization of InP-based pseudomorphic HEMT with T-gate SK Dubey, K Sinha, PK Sahu, R Ranjan, A Pal, A Islam Microsystem Technologies 26, 2183-2191, 2020 | 16 | 2020 |
| A 2.4 GHz double balanced downconversion mixer with improved conversion gain in 180-nm technology S Kumar, S Saraiyan, SK Dubey, S Pal, A Islam Microsystem Technologies 26 (5), 1721-1731, 2020 | 12 | 2020 |
| Architecture of resistive RAM with write driver SK Dubey, A Reddy, R Patel, M Abz, A Srinivasulu, A Islam Solid State Electronics Letters 2, 10-22, 2020 | 10 | 2020 |
| Design of resistive random access memory cell and its architecture SK Dubey, A Islam Microsystem Technologies 26, 1325-1332, 2020 | 9 | 2020 |
| Al0. 30Ga0. 70N/GaN MODFET with triple-teeth metal for RF and high-power applications SK Dubey, A Islam Physica Scripta 97 (3), 034003, 2022 | 7 | 2022 |
| Indium phosphide based dual gate high electron mobility transistor SK Dubey, A Islam Energy Systems, Drives and Automations: Proceedings of ESDA 2019, 255-264, 2020 | 6 | 2020 |
| Study and analysis of AlInN/GaN based high electron mobility transistor SK Dubey, A Islam Energy Systems, Drives and Automations: Proceedings of ESDA 2019, 449-459, 2020 | 6 | 2020 |
| Effect of source, drain and channel spacing from gate of HEMT SK Dubey, A Islam Energy Systems, Drives and Automations: Proceedings of ESDA 2019, 81-90, 2020 | 6 | 2020 |
| AlGaN/GaN HEMT with recessed T-gate and floating metal for high power applications SK Dubey, A Islam 2021 Devices for Integrated Circuit (DevIC), 216-220, 2021 | 5 | 2021 |
| Impact of gate recessing on DC, RF and noise parameters of 6H-SiC-based Al0.30Ga0.70N/GaN HEMT for RF and low noise applications SK Dubey, A Islam Microsystem Technologies 29 (4), 515-525, 2023 | 4 | 2023 |
| A Highly Reliable and Radiation-Hardened Majority PFET-Based 10T SRAM Cell Aakansha, GS Namith, A Dinesh, AS Ram, SK Dubey, A Islam Microelectronics, Circuits and Systems: Select Proceedings of 7th …, 2021 | 3 | 2021 |
| Radiation tolerant memory cell for aerospace applications PK Sahu, S Koushik, SK Dubey, A Islam Microelectronics, Circuits and Systems: Select Proceedings of 7th …, 2021 | 3 | 2021 |
| Comparative study of active inductor-based low-noise amplifiers V Kumar, SK Dubey, A Islam Energy Systems, Drives and Automations: Proceedings of ESDA 2019, 411-418, 2020 | 3 | 2020 |
| Nonvolatile write driver for spin transfer torque memory and logic design S Saha, SK Dubey, S Banerjee, I Pal, A Islam Social Transformation–Digital Way: 52nd Annual Convention of the Computer …, 2018 | 3 | 2018 |
| Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers S Nandi, SK Dubey, M Kumar, AK Dwivedi, M Guduri, A Islam IEEE Access 11, 133115-133130, 2023 | 2 | 2023 |
| Analysis of source, drain and gate field plated AlGaN/GaN based HEMT for high breakdown voltage S Nandi, SK Dubey, M Kumar, A Islam 2023 IEEE Devices for Integrated Circuit (DevIC), 526-530, 2023 | 2 | 2023 |
| Radiation Immune SRAM Cell for Deep Space Applications S Koushik, PK Sahu, SK Dubey, A Islam Microelectronics, Circuits and Systems, 147-156, 2021 | 2 | 2021 |
| Robustness study of Muller C-element K Agrawal, S Chowdhury, SK Dubey, A Islam Social Transformation–Digital Way: 52nd Annual Convention of the Computer …, 2018 | 2 | 2018 |
