John C. Bean
John C. Bean
Stanford University OR Bell Labs OR University of Virginia
Verified email at virginia.edu
TitleCited byYear
Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
R People, JC Bean
Applied Physics Letters 47 (3), 322-324, 1985
20761985
GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
JC Bean, LC Feldman, AT Fiory, S Nakahara, IK Robinson
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (2 …, 1984
9171984
Band alignments of coherently strained GexSi1−x/Si heterostructures on <001> GeySi1−y substrates
R People, JC Bean
Applied physics letters 48 (8), 538-540, 1986
4031986
Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures
DV Lang, R People, JC Bean, AM Sergent
Applied Physics Letters 47 (12), 1333-1335, 1985
3871985
Modulation doping in GexSi1−x/Si strained layer heterostructures
R People, JC Bean, DV Lang, AM Sergent, HL Störmer, KW Wecht, ...
Applied Physics Letters 45 (11), 1231-1233, 1984
3481984
Semiconductors for room temperature nuclear detector applications
TE Schlesinger, RB James
Academic Press 43, 319-322, 1995
3461995
Observation of order-disorder transitions in strained-semiconductor systems
A Ourmazd, JC Bean
Physical review letters 55 (7), 765, 1985
3041985
Silicon-based semiconductor heterostructures: column IV bandgap engineering
JC Bean
Proceedings of the IEEE 80 (4), 571-587, 1992
3031992
Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors
DH Auston, AM Johnson, PR Smith, JC Bean
Applied Physics Letters 37 (4), 371-373, 1980
3011980
Pseudomorphic growth of GexSi1x on silicon by molecular beam epitaxy
JC Bean, TT Sheng, LC Feldman, AT Fiory, RT Lynch
Applied Physics Letters 44 (1), 102-104, 1984
2821984
Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films
C Teichert, MG Lagally, LJ Peticolas, JC Bean, J Tersoff
Physical Review B 53 (24), 16334, 1996
2771996
Raman scattering from GexSi1−x/Si strained‐layer superlattices
F Cerdeira, A Pinczuk, JC Bean, B Batlogg, BA Wilson
Applied Physics Letters 45 (10), 1138-1140, 1984
2771984
In Vivo Targeting and Imaging of Tumor Vasculature with Radiolabeled, Antibody-Conjugated Nanographene
H Hong, K Yang, Y Zhang, JW Engle, L Feng, Y Yang, TR Nayak, S Goel, ...
ACS nano 6 (3), 2361-2370, 2012
2672012
GexSi1−x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm
H Temkin, TP Pearsall, JC Bean, RA Logan, S Luryi
Applied Physics Letters 48 (15), 963-965, 1986
2661986
Epitaxial silicides
RT Tung, JM Poate, JC Bean, JM Gibson, DC Jacobson
MRS Online Proceedings Library Archive 10, 1981
2601981
Growth of single‐crystal CoSi2 on Si(111)
RT Tung, JC Bean, JM Gibson, JM Poate, DC Jacobson
Applied Physics Letters 40 (8), 684-686, 1982
2351982
Misfit dislocations in lattice-mismatched epitaxial films
R Hull, JC Bean
Critical Reviews in Solid State and Material Sciences 17 (6), 507-546, 1992
2281992
Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon
JC Bean, GE Becker, PM Petroff, TE Seidel
Journal of Applied Physics 48 (3), 907-913, 1977
2181977
New infrared detector on a silicon chip
S Luryi, A Kastalsky, JC Bean
IEEE Transactions on Electron Devices 31 (9), 1135-1139, 1984
1991984
Stability of semiconductor strained‐layer superlattices
R Hull, JC Bean, F Cerdeira, AT Fiory, JM Gibson
Applied physics letters 48 (1), 56-58, 1986
1871986
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