| Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes S Sdoeung, K Sasaki, S Masuya, K Kawasaki, J Hirabayashi, A Kuramata, ... Applied Physics Letters 118 (17), 2021 | 42 | 2021 |
| Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy S Sdoeung, K Sasaki, K Kawasaki, J Hirabayashi, A Kuramata, T Oishi, ... Applied Physics Letters 117 (2), 2020 | 42 | 2020 |
| Polycrystalline defects—origin of leakage current—in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes identified via ultrahigh sensitive emission microscopy … S Sdoeung, K Sasaki, K Kawasaki, J Hirabayashi, A Kuramata, M Kasu Applied Physics Express 14 (3), 036502, 2021 | 25 | 2021 |
| Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes S Sdoeung, K Sasaki, K Kawasaki, J Hirabayashi, A Kuramata, T Oishi, ... Applied Physics Letters 120 (12), 2022 | 12 | 2022 |
| Probe-induced surface defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes S Sdoeung, K Sasaki, K Kawasaki, J Hirabayashi, A Kuramata, M Kasu Applied Physics Letters 120 (9), 2022 | 12 | 2022 |
| Characterization of dislocation of halide vapor phase epitaxial (001) β-Ga2O3 by ultrahigh sensitive emission microscopy and synchrotron X-ray topography and its influence on … S Sdoeung, K Sasaki, K Kawasaki, J Hirabayashi, A Kuramata, M Kasu Japanese Journal of Applied Physics 62 (SF), SF1001, 2023 | 11 | 2023 |
| Identification of dislocation responsible for leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh-sensitive … S Sdoeung, K Sasaki, A Kuramata, M Kasu Applied Physics Express 15 (11), 111001, 2022 | 9 | 2022 |
| High crystal quality of vertical Bridgman and edge-defined film-fed growth β-Ga2O3 bulk crystals investigated using high-resolution X-ray diffraction and synchrotron X-ray … MI Chaman, K Hoshikawa, S Sdoeung, M Kasu Japanese Journal of Applied Physics 61 (5), 055501, 2022 | 9 | 2022 |
| Observation of comet-shaped defect as killer defect in halide vapor phase epitaxial (001) β-Ga2O3 and its impact on Schottky barrier diodes S Sdoeung, K Sasaki, K Kawasaki, J Hirabayashi, A Kuramata, M Kasu Japanese Journal of Applied Physics 62 (7), 071001, 2023 | 7 | 2023 |
| Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission … S Sdoeung, Y Otsubo, K Sasaki, A Kuramata, M Kasu Applied Physics Letters 123 (12), 2023 | 5 | 2023 |
| Polycrystalline Defects Origin of Reverse Leakage Current in HVPE (001) β-Ga2O3 SBDs Identified by High Sensitive Emission Microscope S Sdoeung, K Sasaki, K Kawasaki, J Hirabayashi, A Kuramata, M Kasu JSAP Annual Meetings Extended Abstracts The 68th JSAP Spring Meeting 2021 …, 2021 | | 2021 |
| Observation of Reverse Leakage Current in (001) b-Gallium Oxide Schottky Barrier Diodes by High Sensitive Emission Microscope S Sdoeung, K Sasaki, A Kuramata, M Kasu JSAP Annual Meetings Extended Abstracts The 67th JSAP Spring Meeting 2020 …, 2020 | | 2020 |
| Study on crystal defects of β-gallium oxide and their impact on power Schottky barrier diode characteristics S Sdoeung | | |
