Germanium oxynitride gate interlayer dielectric formed on Ge (100) using decoupled plasma nitridation P Bhatt, K Chaudhuri, S Kothari, A Nainani, S Lodha Applied Physics Letters 103 (17), 2013 | 47 | 2013 |
Improved n-channel Ge gate stack performance using HfAlO high-k dielectric for various Al concentrations SGSL Shraddha Kothari, Chandan Joishi, Sayantan Ghosh, Dipankar Biswas ... Applied Physics Express 9 (7), 071302, 2016 | 11 | 2016 |
Plasma-assisted As implants for effective work function modulation of TiN/HfO2 gate stacks on germanium S Kothari, D Vaidya, H Nejad, N Variam, S Ganguly, S Lodha Applied Physics Letters 112 (20), 2018 | 7 | 2018 |
Plasma-assisted low energy N2 implant for Vfb tuning of Ge gate stacks S Kothari, C Joishi, H Nejad, N Variam, S Lodha Applied Physics Letters 109 (7), 2016 | 7 | 2016 |
Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOₓ-Based Memristors—Part I: Behavioral Model D Vaidya, S Kothari, T Abbey, A Khiat, S Stathopoulos, L Michalas, A Serb, ... IEEE Transactions on Electron Devices 68 (10), 4877-4884, 2021 | 6 | 2021 |
Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al2O3 and GeOx ILs Using Ultrafast Charge Trap–Detrap Techniques C Joishi, S Ghosh, S Kothari, N Parihar, S Mukhopadhyay, S Mahapatra, ... IEEE Transactions on Electron Devices 65 (10), 4245-4253, 2018 | 5 | 2018 |
Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOₓ Memristors—Part II: Physics-Based Model D Vaidya, S Kothari, T Abbey, S Stathopoulos, L Michalas, A Serb, ... IEEE Transactions on Electron Devices 68 (10), 4885-4890, 2021 | 3 | 2021 |
Completeness issues for join dependencies derived from the universal relation join dependency LL Miller, SK Gadia, S Kothari, KC Liu Information processing letters 28 (5), 269-274, 1988 | 3 | 1988 |
Ultrafast PBTI characterization on Si-free gate last Ge nFETs with stable and ultrathin Al2O3IL C Joishi, S Kothari, S Ghosh, S Mukhopadhyay, S Mahapatra, S Lodha 2017 IEEE International Reliability Physics Symposium (IRPS), 5C-5.1-5C-5.7, 2017 | 2 | 2017 |
Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications S Kothari, C Joishi, D Vaidya, H Nejad, B Colombeau, S Ganguly, ... 2015 45th European Solid State Device Research Conference (ESSDERC), 214-217, 2015 | 1 | 2015 |
Dataset for" Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiOx-Based Memristors: Part I—Behavioral Model" D Vaidya, S Kothari, T Abbey, A Khiat, S Stathopoulos, L Michalas, A Serb, ... University of Southampton, 2021 | | 2021 |
Interlayer Engineering in GeSn Gate Stacks for Advanced CMOS S Kothari, JS Rathore, KR Khiangte, S Mahapatra, S Lodha 2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2018 | | 2018 |
Minority Carrier Lifetime Enhancement of C-Si/TiO2 Heterojunction by Post Deposition Annealing AA S. Bhatia, S. Kothari, N. Raorane, S. Lodha, P.R. Nair 32nd European Photovoltaic Solar Energy Conference and Exhibition, Munich,, 2016 | | 2016 |
Enhanced Ge n-channel gate stack performance using HfAlO high-k dielectric S Kothari, C Joishi, D Biswas, D Vaidya, S Ganguly, S Lodha 2015 73rd Annual Device Research Conference (DRC), 285-286, 2015 | | 2015 |