| Fabrication of silicon nanowire networks for biological sensing P Serre, C Ternon, V Stambouli, P Periwal, T Baron Sensors and Actuators B: Chemical 182, 390-395, 2013 | 64 | 2013 |
| Composition-Dependent Interfacial Abruptness in Au-Catalyzed Si1–xGex/Si/Si1–xGex Nanowire Heterostructures P Periwal, NV Sibirev, G Patriarche, B Salem, F Bassani, VG Dubrovskii, ... Nano letters 14 (9), 5140-5147, 2014 | 47 | 2014 |
| Multimode silicon nanowire transistors S Glassner, C Zeiner, P Periwal, T Baron, E Bertagnolli, A Lugstein Nano letters 14 (11), 6699-6703, 2014 | 36 | 2014 |
| Percolating silicon nanowire networks with highly reproducible electrical properties P Serre, M Mongillo, P Periwal, T Baron, C Ternon Nanotechnology 26 (1), 015201, 2014 | 35 | 2014 |
| Enhanced nonlinear optical response from individual silicon nanowires PR Wiecha, A Arbouet, H Kallel, P Periwal, T Baron, V Paillard Physical Review B 91 (12), 121416, 2015 | 32 | 2015 |
| Photoluminescence enhancement of silicon nanocrystals placed in the near field of a silicon nanowire H Kallel, A Arbouet, M Carrada, GB Assayag, A Chehaidar, P Periwal, ... Physical Review B 88 (8), 081302, 2013 | 24 | 2013 |
| High aspect ratio semiconducting nanostructure random networks: highly versatile materials for multiple applications C Ternon, P Serre, G Rey, C Holtzinger, P Periwal, M Martin, T Baron, ... physica status solidi (RRL)–Rapid Research Letters 7 (10), 919-923, 2013 | 21 | 2013 |
| Catalytically mediated epitaxy of 3D semiconductors on van der Waals substrates P Periwal, JD Thomsen, K Reidy, G Varnavides, DN Zakharov, L Gignac, ... Applied Physics Reviews 7 (3), 2020 | 20 | 2020 |
| Mechanisms of quasi van Der waals epitaxy of three-dimensional metallic nanoislands on suspended two-dimensional materials K Reidy, JD Thomsen, HY Lee, V Zarubin, Y Yu, B Wang, T Pham, ... Nano Letters 22 (14), 5849-5858, 2022 | 19 | 2022 |
| Growth strategies to control tapering in Ge nanowires P Periwal, T Baron, P Gentile, B Salem, F Bassani APL Materials 2 (4), 2014 | 18 | 2014 |
| Fabrication and characterization of silicon nanowire pin MOS gated diode for use as p-type tunnel FET V Brouzet, B Salem, P Periwal, G Rosaz, T Baron, F Bassani, P Gentile, ... Applied Physics A 121, 1285-1290, 2015 | 17 | 2015 |
| Fabrication and electrical characterization of homo-and hetero-structure Si/SiGe nanowire tunnel field effect transistor grown by vapor–liquid–solid mechanism V Brouzet, B Salem, P Periwal, R Alcotte, F Chouchane, F Bassani, ... Solid-State Electronics 118, 26-29, 2016 | 16 | 2016 |
| Dopant profiling in silicon nanowires measured by scanning capacitance microscopy F Bassani, P Periwal, B Salem, N Chevalier, D Mariolle, G Audoit, ... physica status solidi (RRL)–Rapid Research Letters 8 (4), 312-316, 2014 | 15 | 2014 |
| Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach JL Pura, J Anaya, J Souto, AC Prieto, A Rodríguez, T Rodríguez, ... Journal of Applied Physics 123 (11), 2018 | 10 | 2018 |
| Growth dynamics of SiGe nanowires by the vapour–liquid–solid method and its impact on SiGe/Si axial heterojunction abruptness JL Pura, P Periwal, T Baron, J Jiménez Nanotechnology 29 (35), 355602, 2018 | 8 | 2018 |
| Stability of Schottky and Ohmic Au nanocatalysts to ZnO nanowires AM Lord, QM Ramasse, DM Kepaptsoglou, P Periwal, FM Ross, SP Wilks Nano Letters 17 (11), 6626-6636, 2017 | 8 | 2017 |
| Nanoscale elemental quantification in heterostructured SiGe nanowires W Hourani, P Periwal, F Bassani, T Baron, G Patriarche, E Martinez Nanoscale 7 (18), 8544-8553, 2015 | 8 | 2015 |
| Interfacial abruptness in axial Si/SiGe heterostructures in nanowires probed by scanning capacitance microscopy P Periwal, F Bassani, G Patriarche, L Latu‐Romain, V Brouzet, B Salem, ... physica status solidi (a) 211 (2), 509-513, 2014 | 7 | 2014 |
| Control of the interfacial abruptness of Au-catalyzed Si-Si1− xGex heterostructured nanowires grown by vapor–liquid–solid P Periwal, T Baron, L Latu-Romain, B Salem, F Bassani, G Patriarche, ... Journal of Vacuum Science & Technology A 32 (3), 2014 | 5 | 2014 |
| In situ TEM Approaches to Controlling the Growth of Semiconductors on 2D Materials P Periwal, JD Thomsen, MC Reuter, D Zakharov, L Gignac, TJ Booth, ... Microscopy and Microanalysis 25 (S2), 1424-1425, 2019 | 2 | 2019 |
