| Negative capacitance in a ferroelectric capacitor AI Khan, K Chatterjee, B Wang, S Drapcho, L You, C Serrao, SR Bakaul, ... Nature materials 14 (2), 182, 2015 | 813 | 2015 |
| The future of ferroelectric field-effect transistor technology AI Khan, A Keshavarzi, S Datta Nature Electronics 3 (10), 588-597, 2020 | 581 | 2020 |
| Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures AI Khan, D Bhowmik, P Yu, SJ Kim, X Pan, R Ramesh, S Salahuddin Applied Physics Letters 99 (11), 113501, 2011 | 400 | 2011 |
| Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation AI Khan, CW Yeung, C Hu, S Salahuddin Electron Devices Meeting (IEDM), 2011 IEEE International, 11.3. 1-11.3. 4, 2011 | 378 | 2011 |
| Spatially resolved steady-state negative capacitance AK Yadav, KX Nguyen, Z Hong, P García-Fernández, P Aguado-Puente, ... Nature, 1, 2019 | 335 | 2019 |
| Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2 M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ... Advanced Functional Materials, 2016 | 284 | 2016 |
| Negative Capacitance in Short Channel FinFETs Externally Connected to An Epitaxial Ferroelectric Capacitor A Islam Khan, K Chatterjee, JP Duarte, Z Lu, A Sachid, S Khandelwal, ... IEEE Electron Device Letters 37 (1), 111 - 114, 2016 | 258* | 2016 |
| Single Crystal Functional Oxides on Silicon SR Bakaul, CR Serrao, M Lee, CW Yeung, A Sarker, SL Hsu, A Yadav, ... Nature Communications, 10547, 2016 | 215 | 2016 |
| Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics CI Lin, AI Khan, S Salahuddin, C Hu IEEE Transactions on Electron Devices 63 (5), 2197 - 2199, 2016 | 202 | 2016 |
| Room-temperature negative capacitance in a ferroelectric–dielectric superlattice heterostructure W Gao, A Khan, X Marti, C Nelson, C Serrao, J Ravichandran, R Ramesh, ... Nano letters 14 (10), 5814-5819, 2014 | 169 | 2014 |
| Negative Capacitance Behavior in a Leaky Ferroelectric AI Khan, U Radhakrishna, K Chatterjee, S Salahuddin, DA Antoniadis IEEE Transactions on Electron Devices 63 (11), 4416-4422, 2016 | 147 | 2016 |
| Nonvolatile memory design based on ferroelectric FETs S George, K Ma, A Aziz, X Li, A Khan, S Salahuddin, MF Chang, S Datta, ... Design Automation Conference (DAC), 2016 53nd ACM/EDAC/IEEE, 1-6, 2016 | 133 | 2016 |
| Compact models of negative-capacitance FinFETs: Lumped and distributed charge models JP Duarte, S Khandelwal, AI Khan, A Sachid, YK Lin, HL Chang, ... Electron Devices Meeting (IEDM), 2016 IEEE International, 30.5. 1-30.5. 4, 2016 | 104 | 2016 |
| Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery K Chatterjee, S Kim, G Karbasian, AJ Tan, AK Yadav, AI Khan, C Hu, ... IEEE Electron Device Letters 38 (10), 1379-1382, 2017 | 96 | 2017 |
| Enabling Energy-Efficient Nonvolatile Computing With Negative Capacitance FET X Li, J Sampson, A Khan, K Ma, S George, A Aziz, SK Gupta, ... IEEE Transactions on Electron Devices 64 (8), 3452-3458, 2017 | 94 | 2017 |
| Ferroelectric negative capacitance domain dynamics M Hoffmann, AI Khan, C Serrao, Z Lu, S Salahuddin, M Pešić, ... Journal of Applied Physics 123 (18), 184101, 2018 | 86 | 2018 |
| Work function engineering for performance improvement in leaky negative capacitance FETs AI Khan, U Radhakrishna, S Salahuddin, D Antoniadis IEEE Electron Device Letters 38 (9), 1335-1338, 2017 | 86 | 2017 |
| Impact of Parasitic Capacitance and Ferroelectric Parameters on Negative Capacitance FinFET Characteristics S Khandelwal, JP Duarte, AI Khan, S Salahuddin, C Hu IEEE Electron Device Letters 38 (1), 142-144, 2017 | 84 | 2017 |
| Low power negative capacitance FETs for future quantum-well body technology CW Yeung, AI Khan, A Sarker, S Salahuddin, C Hu VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International …, 2013 | 79 | 2013 |
| Experimental Demonstration of Ferroelectric Spiking Neurons for Unsupervised Clustering Z Wang, B Crafton, J Gomez, R Xu, A Luo, Z Krivokapic, L Martin, S Datta, ... 2018 IEEE International Electron Devices Meeting (IEDM), 13.3. 1-13.3. 4, 2018 | 76 | 2018 |
