| Ferroelectricity in Simple Binary ZrO2 and HfO2 J Muller, TS Boscke, U Schroder, S Mueller, D Brauhaus, U Bottger, ... Nano letters 12 (8), 4318-4323, 2012 | 1328 | 2012 |
| Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015 | 847 | 2015 |
| Incipient ferroelectricity in Al‐doped HfO2 thin films S Mueller, J Mueller, A Singh, S Riedel, J Sundqvist, U Schroeder, ... Advanced Functional Materials 22 (11), 2412-2417, 2012 | 681 | 2012 |
| Ferroelectricity in yttrium-doped hafnium oxide J Müller, U Schröder, TS Böscke, I Müller, U Böttger, L Wilde, J Sundqvist, ... Journal of Applied Physics 110 (11), 114113, 2011 | 556 | 2011 |
| Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016 | 550 | 2016 |
| Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications J Müller, TS Böscke, D Bräuhaus, U Schröder, U Böttger, J Sundqvist, ... Applied Physics Letters 99 (11), 112901, 2011 | 478 | 2011 |
| Stabilizing the ferroelectric phase in doped hafnium oxide M Hoffmann, U Schroeder, T Schenk, T Shimizu, H Funakubo, O Sakata, ... Journal of Applied Physics 118 (7), 072006, 2015 | 443 | 2015 |
| Reconfigurable silicon nanowire transistors A Heinzig, S Slesazeck, F Kreupl, T Mikolajick, WM Weber Nano letters 12 (1), 119-124, 2012 | 402 | 2012 |
| Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories J Muller, TS Boscke, S Muller, E Yurchuk, P Polakowski, J Paul, D Martin, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 10.8. 1-10.8. 4, 2013 | 396 | 2013 |
| Ferroelectric hafnium oxide based materials and devices: Assessment of current status and future prospects J Müller, P Polakowski, S Mueller, T Mikolajick ECS Journal of Solid State Science and Technology 4 (5), N30-N35, 2015 | 393 | 2015 |
| A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017 | 379 | 2017 |
| Review and perspective on ferroelectric HfO2-based thin films for memory applications MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang Mrs Communications 8 (3), 795-808, 2018 | 341 | 2018 |
| Impact of different dopants on the switching properties of ferroelectric hafniumoxide U Schroeder, E Yurchuk, J Müller, D Martin, T Schenk, P Polakowski, ... Japanese Journal of Applied Physics 53 (8S1), 08LE02, 2014 | 332 | 2014 |
| Phase transitions in ferroelectric silicon doped hafnium oxide TS Böscke, S Teichert, D Bräuhaus, J Müller, U Schröder, U Böttger, ... Applied Physics Letters 99 (11), 112904, 2011 | 316 | 2011 |
| A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016 | 311 | 2016 |
| Unveiling the double-well energy landscape in a ferroelectric layer M Hoffmann, FPG Fengler, M Herzig, T Mittmann, B Max, U Schroeder, ... Nature 565 (7740), 464-467, 2019 | 295 | 2019 |
| Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO2 Thin Films ED Grimley, T Schenk, X Sang, M Pešić, U Schroeder, T Mikolajick, ... Advanced Electronic Materials 2 (9), 1600173, 2016 | 293 | 2016 |
| Switching kinetics in nanoscale hafnium oxide based ferroelectric field-effect transistors H Mulaosmanovic, J Ocker, S Müller, U Schroeder, J Müller, ... ACS applied materials & interfaces 9 (4), 3792-3798, 2017 | 263 | 2017 |
| Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ... 2012 Symposium on VLSI Technology (VLSIT), 25-26, 2012 | 261 | 2012 |
| Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ... Nanoscale 9 (28), 9973-9986, 2017 | 254 | 2017 |
Stefan SlesazeckNaMLab gGmbHVerified email at namlab.com
