Bruce Wessels
Bruce Wessels
在 的电子邮件经过验证
Crystal Growth of the Perovskite Semiconductor CsPbBr3: A New Material for High-Energy Radiation Detection
CC Stoumpos, CD Malliakas, JA Peters, Z Liu, M Sebastian, J Im, ...
Crystal growth & design 13 (7), 2722-2727, 2013
Luminescence of heteroepitaxial zinc oxide
S Bethke, H Pan, BW Wessels
Applied physics letters 52 (2), 138-140, 1988
Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
MA Reshchikov, GC Yi, BW Wessels
Physical Review B 59 (20), 13176, 1999
Strong Electron–Phonon Coupling and Self-Trapped Excitons in the Defect Halide Perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb)
KM McCall, CC Stoumpos, SS Kostina, MG Kanatzidis, BW Wessels
Chemistry of Materials 29 (9), 4129-4145, 2017
Three-dimensional nanoscale composition mapping of semiconductor nanowires
DE Perea, JE Allen, SJ May, BW Wessels, DN Seidman, LJ Lauhon
Nano letters 6 (2), 181-185, 2006
High spectral resolution of gamma-rays at room temperature by perovskite CsPbBr 3 single crystals
Y He, L Matei, HJ Jung, KM McCall, M Chen, CC Stoumpos, Z Liu, ...
Nature communications 9 (1), 1-8, 2018
Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition
LA Wills, BW Wessels, DS Richeson, TJ Marks
Applied physics letters 60 (1), 41-43, 1992
Combinatorial Generation and Analysis of Nanometerand MicrometerScale Silicon Features via “DipPen” Nanolithography and Wet Chemical Etching
DA Weinberger, S Hong, CA Mirkin, BW Wessels, TB Higgins
Advanced Materials 12 (21), 1600-1603, 2000
Optical properties of the deep Mn acceptor in GaN: Mn
RY Korotkov, JM Gregie, BW Wessels
Applied physics letters 80 (10), 1731-1733, 2002
Excitonic emissions and above-band-gap luminescence in the single-crystal perovskite semiconductors and
M Sebastian, JA Peters, CC Stoumpos, J Im, SS Kostina, Z Liu, ...
Physical Review B 92 (23), 235210, 2015
Thin-film channel waveguide electro-optic modulator in epitaxial
DM Gill, CW Conrad, G Ford, BW Wessels, ST Ho
Applied Physics Letters 71 (13), 1783-1785, 1997
Ferroelectric epitaxial thin films for integrated optics
BW Wessels
Annu. Rev. Mater. Res. 37, 659-679, 2007
Dielectric properties of epitaxial thin films
BH Hoerman, GM Ford, LD Kaufmann, BW Wessels
Applied physics letters 73 (16), 2248-2250, 1998
Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg
F Shahedipour, BW Wessels
Applied Physics Letters 76 (21), 3011-3013, 2000
Secondharmonic generation of poled BaTiO3 thin films
HA Lu, LA Wills, BW Wessels, WP Lin, TG Zhang, GK Wong, ...
Applied physics letters 62 (12), 1314-1316, 1993
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
MA Reshchikov, F Shahedipour, RY Korotkov, BW Wessels, MP Ulmer
Journal of Applied Physics 87 (7), 3351-3354, 2000
Dimensional reduction: a design tool for new radiation detection materials
J Androulakis, SC Peter, H Li, CD Malliakas, JA Peters, Z Liu, ...
Advanced Materials 23 (36), 4163-4167, 2011
Organometallic chemical vapor deposition of high Tc superconducting films using a volatile, fluorocarbonbased precursor
J Zhao, KH Dahmen, HO Marcy, LM Tonge, TJ Marks, BW Wessels, ...
Applied physics letters 53 (18), 1750-1752, 1988
Thallium Chalcohalides for X-ray and γ-ray Detection
S Johnsen, Z Liu, JA Peters, JH Song, S Nguyen, CD Malliakas, H Jin, ...
Journal of the American Chemical Society 133 (26), 10030-10033, 2011
Electrical properties of p-type GaN:Mg codoped with oxygen
RY Korotkov, JM Gregie, BW Wessels
Applied Physics Letters 78 (2), 222-224, 2001
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