| Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001) T Shen, JJ Gu, M Xu, YQ Wu, ML Bolen, MA Capano, LW Engel, PD Ye Applied Physics Letters 95 (17), 2009 | 180 | 2009 |
| First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach JJ Gu, YQ Liu, YQ Wu, R Colby, RG Gordon, PD Ye 2011 International Electron Devices Meeting, 33.2. 1-33.2. 4, 2011 | 141 | 2011 |
| Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming H Liu, J Gu, DY Peide IEEE electron device letters 33 (9), 1273-1275, 2012 | 129 | 2012 |
| Magneto-transport in MoS2: Phase Coherence, Spin–Orbit Scattering, and the Hall Factor AT Neal, H Liu, J Gu, PD Ye Acs Nano 7 (8), 7077-7082, 2013 | 122 | 2013 |
| 20–80nm channel length InGaAs gate-all-around nanowire MOSFETs with EOT= 1.2 nm and lowest SS= 63mV/dec JJ Gu, XW Wang, H Wu, J Shao, AT Neal, MJ Manfra, RG Gordon, PD Ye 2012 International Electron Devices Meeting, 27.6. 1-27.6. 4, 2012 | 109 | 2012 |
| First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching YQ Wu, RS Wang, T Shen, JJ Gu, PD Ye 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 108 | 2009 |
| Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs SH Shin, MA Wahab, M Masuduzzaman, K Maize, J Gu, M Si, A Shakouri, ... IEEE Transactions on Electron Devices 62 (11), 3516-3523, 2015 | 86 | 2015 |
| Effects of (NH4) 2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors JJ Gu, AT Neal, PD Ye Applied Physics Letters 99 (15), 2011 | 86 | 2011 |
| III-V gate-all-around nanowire MOSFET process technology: From 3D to 4D JJ Gu, XW Wang, J Shao, AT Neal, MJ Manfra, RG Gordon, PD Ye 2012 International Electron Devices Meeting, 23.7. 1-23.7. 4, 2012 | 68 | 2012 |
| Metal contacts to MoS2: A two-dimensional semiconductor AT Neal, H Liu, JJ Gu, PD Ye 70th Device Research Conference, 65-66, 2012 | 62 | 2012 |
| Size-dependent Transport Study of In0. 53Ga0. 47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion JJ Gu, H Wu, Y Liu, AT Neal, RG Gordon, PD Ye Arxiv preprint arXiv:1204.1665, 2012 | 59* | 2012 |
| Rapid degradation of CdSe∕ ZnS colloidal quantum dots exposed to gamma irradiation NJ Withers, K Sankar, BA Akins, TA Memon, T Gu, J Gu, GA Smolyakov, ... Applied Physics Letters 93 (17), 2008 | 53 | 2008 |
| High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation … JJ Gu, YQ Liu, M Xu, GK Celler, RG Gordon, PD Ye Applied Physics Letters 97 (1), 2010 | 47 | 2010 |
| GaSb metal-oxide-semiconductor capacitors with atomic-layer-deposited HfAlO as gate dielectric C Wang, M Xu, J Gu, DW Zhang, DY Peide Electrochemical and Solid-State Letters 15 (3), H51, 2011 | 46 | 2011 |
| Low-frequency noise and random telegraph noise on near-ballistic III-V MOSFETs M Si, NJ Conrad, S Shin, J Gu, J Zhang, MA Alam, DY Peide IEEE Transactions on Electron Devices 62 (11), 3508-3515, 2015 | 45 | 2015 |
| Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors JJ Gu, YQ Wu, PD Ye Journal of applied physics 109 (5), 2011 | 40 | 2011 |
| Germanium nMOSFETs with recessed channel and S/D: Contact, scalability, interface, and drain current exceeding 1 A/mm H Wu, M Si, L Dong, J Gu, J Zhang, DY Peide IEEE Transactions on Electron Devices 62 (5), 1419-1426, 2015 | 39 | 2015 |
| Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs SH Shin, M Masuduzzaman, JJ Gu, MA Wahab, N Conrad, M Si, PD Ye, ... 2013 IEEE International Electron Devices Meeting, 7.5. 1-7.5. 4, 2013 | 38 | 2013 |
| III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation JJ Gu, O Koybasi, YQ Wu, PD Ye Applied Physics Letters 99 (11), 2011 | 38 | 2011 |
| Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors M Si, JJ Gu, X Wang, J Shao, X Li, MJ Manfra, RG Gordon, PD Ye Applied Physics Letters 102 (9), 2013 | 34 | 2013 |
Peide YeRichard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering, Purdue UniversityVerified email at purdue.edu
