| Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition E Farzana, F Alema, WY Ho, A Mauze, T Itoh, A Osinsky, JS Speck Applied Physics Letters 118 (16), 2021 | 61 | 2021 |
| Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates C Lynsky, RC White, YC Chow, WY Ho, S Nakamura, SP DenBaars, ... Journal of Crystal Growth 560, 126048, 2021 | 17 | 2021 |
| III-nitride blue light-emitting diodes utilizing hybrid tunnel junction with low excess voltage J Wang, EC Young, WY Ho, B Bonef, T Margalith, JS Speck Semiconductor Science and Technology 35 (12), 125026, 2020 | 14 | 2020 |
| Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs WY Ho, YC Chow, DJ Myers, F Wu, J Peretti, C Weisbuch, JS Speck Applied Physics Letters 119 (5), 2021 | 12 | 2021 |
| Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes DJ Myers, K Gelžinytė, WY Ho, J Iveland, L Martinelli, J Peretti, ... Journal of Applied Physics 124 (5), 2018 | 12 | 2018 |
| Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES) WY Ho, YC Chow, S Nakamura, J Peretti, C Weisbuch, JS Speck Applied Physics Letters 122 (21), 2023 | 5 | 2023 |
| Detection of hot electrons originating from an upper valley at above the valley in wurtzite GaN using electron emission spectroscopy WY Ho, AI Alhassan, C Lynsky, YC Chow, DJ Myers, SP DenBaars, ... Physical Review B 107 (3), 035303, 2023 | 3 | 2023 |
| Injection mechanisms in a III-nitride light-emitting diode as seen by self-emissive electron microscopy T Tak, CW Johnson, WY Ho, F Wu, M Sauty, S Rebollo, AK Schmid, ... Physical Review Applied 20 (6), 064045, 2023 | 2 | 2023 |
| Atomic layer etching (ALE) of III-nitrides WY Ho, YC Chow, Z Biegler, KS Qwah, T Tak, A Wissel-Garcia, I Liu, F Wu, ... Applied Physics Letters 123 (6), 2023 | 2 | 2023 |
| Steady-state junction current distribution in pn GaN diodes measured using low-energy electron microscopy (LEEM) WY Ho, CW Johnson, T Tak, M Sauty, YC Chow, S Nakamura, A Schmid, ... Applied Physics Letters 123 (3), 2023 | 2 | 2023 |
| Vertical hole transport through unipolar InGaN quantum wells and double heterostructures KS Qwah, M Monavarian, WY Ho, YR Wu, JS Speck Physical Review Materials 6 (4), 044602, 2022 | 2 | 2022 |
| Nanoscale mapping of inhomogeneities in the luminescence of operational nitride LEDs C Fornos, N Alyabyeva, M Sauty, WY Ho, YC Chow, T Tak, JS Speck, ... Gallium Nitride Materials and Devices XIX, PC1288608, 2024 | | 2024 |
| Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field E Farzana, F Alema, WY Ho, A Mauze, T Itoh, A Osinsky, JS Speck Oxide-based Materials and Devices XII 11687, 116870G, 2021 | | 2021 |
Jim SpeckProfessor of Materials, UCSBVerified email at ucsb.edu
