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Detection of nonthermal melting by ultrafast X-ray diffraction CW Siders, A Cavalleri, K Sokolowski-Tinten, C Toth, T Guo, M Kammler, ... Science 286 (5443), 1340-1342, 1999 | 741 | 1999 |
Ultrafast bond softening in bismuth: Mapping a solid's interatomic potential with x-rays DM Fritz, DA Reis, B Adams, RA Akre, J Arthur, C Blome, PH Bucksbaum, ... Science 315 (5812), 633-636, 2007 | 490 | 2007 |
Influence of surfactants in Ge and Si epitaxy on Si (001) M Copel, MC Reuter, M Horn-von Hoegen, RM Tromp Physical Review B 42 (18), 11682, 1990 | 390 | 1990 |
Electronic acceleration of atomic motions and disordering in bismuth G Sciaini, M Harb, SG Kruglik, T Payer, CT Hebeisen, FJM Heringdorf, ... Nature 458 (7234), 56-59, 2009 | 346 | 2009 |
Femtosecond X-ray measurement of ultrafast melting and large acoustic transients K Sokolowski-Tinten, C Blome, C Dietrich, A Tarasevitch, ... Physical Review Letters 87 (22), 225701-225701, 2001 | 338 | 2001 |
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Anharmonic lattice dynamics in germanium measured with ultrafast X-ray diffraction A Cavalleri, CW Siders, FLH Brown, DM Leitner, C Toth, JA Squier, ... Physical Review Letters 85 (3), 586-589, 2000 | 211 | 2000 |
Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction-Part I M Horn-von Hoegen Zeitschrift für Kristallographie 214 (10), 591-629, 1999 | 200* | 1999 |
Interplay of wrinkles, strain, and lattice parameter in graphene on iridium H Hattab, AT N’Diaye, D Wall, C Klein, G Jnawali, J Coraux, C Busse, ... Nano letters 12 (2), 678-682, 2012 | 167 | 2012 |
A new twodimensional particle detector for a toroidal electrostatic analyzer RM Tromp, M Copel, MC Reuter, M Horn von Hoegen, J Speidell, ... Review of scientific instruments 62 (11), 2679-2683, 1991 | 147 | 1991 |
Optically excited structural transition in atomic wires on surfaces at the quantum limit T Frigge, B Hafke, T Witte, B Krenzer, C Streubühr, A Samad Syed, ... Nature 544 (7649), 207-211, 2017 | 138 | 2017 |
Selecting a single orientation for millimeter sized graphene sheets R van Gastel, AT N’Diaye, D Wall, J Coraux, C Busse, NM Buckanie, ... Applied physics letters 95 (12), 2009 | 138 | 2009 |
In situ observation of stress relaxation in epitaxial graphene R Gastel, AJ Martínez-Galera, J Coraux, H Hattab, D Wall, FJ Heringdorf, ... New Journal of Physics 11, 113056, 2009 | 137 | 2009 |
Growth temperature dependent graphene alignment on Ir (111) H Hattab, AT N’Diaye, D Wall, G Jnawali, J Coraux, C Busse, ... Applied Physics Letters 98 (14), 2011 | 134 | 2011 |
Layer-by-layer growth of germanium on Si (100): strain-induced morphology and the influence of surfactants U Kohler, O Jusko, B Muller, M Horn-von Hoegen, M Pook Ultramicroscopy 42, 832-837, 1992 | 132 | 1992 |
Normal-incidence photoemission electron microscopy (NI-PEEM) for imaging surface plasmon polaritons P Kahl, S Wall, C Witt, C Schneider, D Bayer, A Fischer, P Melchior, ... Plasmonics 9, 1401-1407, 2014 | 113 | 2014 |
Ultrafast x-ray measurement of laser heating in semiconductors: Parameters determining the melting threshold A Cavalleri, CW Siders, C Rose-Petruck, R Jimenez, C Tóth, JA Squier, ... Physical Review B 63 (19), 193306-193306, 2001 | 111 | 2001 |
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Formation of interfacial dislocation network in surfactant mediated growth of Ge on Si (111) investigated by SPA-LEED. M Horn-von Hoegen, A Al-Falou, H Pietsch, BH Müller, M Henzler Surface science 298 (1), 29-42, 1993 | 104 | 1993 |