| Thermally Grown TiO2and Al2O3for GaN-Based MOS-HEMTs A Rawat, M Meer, V kumar Surana, N Bhardwaj, V Pendem, ... IEEE Transactions on Electron Devices 65 (9), 3725-3731, 2018 | 40 | 2018 |
| Mobility of near surface MOVPE grown InGaAs/InP quantum wells L Södergren, NS Garigapati, M Borg, E Lind Applied Physics Letters 117 (1), 2020 | 13 | 2020 |
| Low field mobility in electrostatically evolved AlGaN/GaN one-dimensional channel from a two-dimensional electron gas system DS Akhil S Kumar, Navya S Garigapati Applied Physics Letters 115 (032105), 2019 | 13 | 2019 |
| III–V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications F Lindelöw, NS Garigapati, L Södergren, M Borg, E Lind Semiconductor Science and Technology 35 (6), 065015, 2020 | 9 | 2020 |
| Strained InxGa (1− x) As/InP near surface quantum wells and MOSFETs NS Garigapati, L Södergren, P Olausson, E Lind Applied Physics Letters 120 (9), 2022 | 5 | 2022 |
| Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs With Self-Aligned a:Si Spacers NS Garigapati, F Lindelöw, L Södergren, E Lind IEEE Transactions on Electron Devices 68 (8), 3762-3767, 2021 | 2 | 2021 |
| Radio Frequency InGaAs MOSFETs NS Garigapati | | 2023 |
| Design and Modeling of InxGa (As/InP based Nanosheet Field Effect Transistors for High Frequency Applications H Liu, X Chen, NS Garigapati | | 2023 |
| 8-band k⋅ p modeling of strained InxGa (1− x) As/InP heterostructure nanowires NS Garigapati, E Lind Journal of Applied Physics 133 (1), 2023 | | 2023 |
| Radio Frequency InGaAs MOSFETs: Doctoral Thesis NS Garigapati Department of Electrical and Information Technology, Faculty of Engineering …, 2023 | | 2023 |
| Deliverable–D2. 3 P Hurley, K Cherkaoui, G Ghibaudo, F Serra, C Theodorou, F Balestra, ... Lars 1 (N9FKT), 2021 | | 2021 |
