| III-nitride deep UV LED without electron blocking layer Z Ren, Y Lu, HH Yao, H Sun, CH Liao, J Dai, C Chen, JH Ryou, J Yan, ... IEEE Photonics Journal 11 (2), 1-11, 2019 | 52 | 2019 |
| Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors X Tang, KH Li, Y Zhao, Y Sui, H Liang, Z Liu, CH Liao, W Babatain, R Lin, ... ACS Applied Materials & Interfaces 14 (1), 1304-1314, 2021 | 33 | 2021 |
| Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array L Zhang, Y Guo, J Yan, Q Wu, Y Lu, Z Wu, W Gu, X Wei, J Wang, J Li Photonics Research 7 (9), B66-B72, 2019 | 31 | 2019 |
| Ultrasensitive Flexible κ-Phase Ga2O3 Solar-Blind Photodetector Y Lu, S Krishna, X Tang, W Babatain, M Ben Hassine, CH Liao, N Xiao, ... ACS Applied Materials & Interfaces 14 (30), 34844-34854, 2022 | 19 | 2022 |
| Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates X Tang, Y Lu, R Lin, CH Liao, Y Zhao, KH Li, N Xiao, H Cao, W Babatain, ... Applied Physics Letters 122 (12), 2023 | 18 | 2023 |
| Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy Z Liu, M Nong, Y Lu, H Cao, S Yuvaraja, N Xiao, Z Alnakhli, RRA Vázquez, ... Optics Letters 47 (23), 6229-6232, 2022 | 11 | 2022 |
| Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation Y Lu, S Krishna, CH Liao, Z Yang, M Kumar, Z Liu, X Tang, N Xiao, ... ACS Applied Materials & Interfaces 14 (42), 47922-47930, 2022 | 11 | 2022 |
| Polarization modulation at last quantum barrier for high efficiency algan-based Uv led Z Liu, Y Lu, Y Wang, R Lin, C Xiong, X Li IEEE Photonics Journal 14 (1), 1-8, 2021 | 11 | 2021 |
| AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device Y Lu, HH Yao, J Li, J Yan, J Wang, J Li, X Li arXiv preprint arXiv:1901.05111, 2019 | 11 | 2019 |
| Band alignment of orthorhombic Ga2O3 with GaN and AlN semiconductors S Krishna, Y Lu, CH Liao, V Khandelwal, X Li Applied Surface Science 599, 153901, 2022 | 10 | 2022 |
| A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm R Lin, Z Liu, P Han, R Lin, Y Lu, H Cao, X Tang, C Wang, V Khandelwal, ... Journal of Materials Chemistry C 10 (46), 17602-17610, 2022 | 10 | 2022 |
| BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer W Gu, Y Lu, R Lin, W Guo, Z Zhang, JH Ryou, J Yan, J Wang, J Li, X Li Journal of Physics D: Applied Physics 54 (17), 175104, 2021 | 10 | 2021 |
| A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction JMT Vasquez, A Ashai, Y Lu, V Khandelwal, M Rajbhar, M Kumar, X Li, ... Journal of Physics D: Applied Physics 56 (6), 065104, 2023 | 9 | 2023 |
| Study of the morphology evolution of AlN grown on nano-patterned sapphire substrate Z Wu, J Yan, Y Guo, L Zhang, Y Lu, X Wei, J Wang, J Li Journal of Semiconductors 40 (12), 122803, 2019 | 9 | 2019 |
| UV light-emitting diode with buried polarization-induced n-AlGaN/InGaN/p-AlGaN tunneling junction Y Lu, C Wang, VP De Oliveira, Z Liu, X Li IEEE Photonics Technology Letters 33 (16), 808-811, 2021 | 8 | 2021 |
| BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructures R Lin, X Liu, K Liu, Y Lu, X Liu, X Li Journal of Physics D: Applied Physics 53 (48), 48LT01, 2020 | 8 | 2020 |
| Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs V Khandelwal, S Yuvaraja, GIM García, C Wang, Y Lu, F AlQatari, X Li Applied Physics Letters 122 (14), 2023 | 7 | 2023 |
| Subquantum-well influence on carrier dynamics in high efficiency DUV dislocation-free AlGaN/AlGaN-based multiple quantum wells IA Ajia, D Almalawi, Y Lu, S Lopatin, X Li, Z Liu, IS Roqan Acs Photonics 7 (7), 1667-1675, 2020 | 7 | 2020 |
| Polarization matched c-plane III-nitride quantum well structure HH Yao, Y Lu, KH Li, F Al-Qatari, CH Liao, X Li Light-Emitting Devices, Materials, and Applications 10940, 73-84, 2019 | 6 | 2019 |
| Highly suppressed interface traps of Al2O3/GaN through interposing a stoichiometric Ga2O3 layer C Wang, Y Lu, CH Liao, S Chandroth, S Yuvaraja, X Li Japanese Journal of Applied Physics 61 (6), 060906, 2022 | 4 | 2022 |
Xiaohang LiAssociate Professor, Advanced Semiconductor Lab, ECE, KAUST, Saudi Arabia在 kaust.edu.sa 的電子郵件地址已通過驗證
