Follow
Weikai Xu
Title
Cited by
Cited by
Year
Energy-and area-efficient Fe-FinFET-based time-domain mixed-signal computing in memory for edge machine learning
J Luo, W Xu, Y Du, B Fu, J Song, Z Fu, M Yang, Y Li, L Ye, Q Huang, ...
2021 IEEE International Electron Devices Meeting (IEDM), 19.5. 1-19.5. 4, 2021
152021
A novel ambipolar ferroelectric tunnel FinFET based content addressable memory with ultra-low hardware cost and high energy efficiency for machine learning
J Luo, W Xu, B Fu, Z Yu, M Yang, Y Li, Q Huang, R Huang
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
132022
Novel ferroelectric tunnel FinFET based encryption-embedded computing-in-memory for secure AI with high area-and energy-efficiency
J Luo, H Shao, B Fu, Z Fu, W Xu, K Wang, M Yang, Y Li, X Lv, Q Huang, ...
2022 International Electron Devices Meeting (IEDM), 36.5. 1-36.5. 4, 2022
32022
A Novel Small-Signal Ferroelectric Capacitance based Content Addressable Memory for Area-and Energy-Efficient Lifelong Learning
W Xu, Z Fu, K Wang, C Su, J Luo, Z Chen, Q Huang, R Huang
IEEE Electron Device Letters, 2023
22023
New insights into the effect of spatially distributed polarization in ferroelectric FET on content addressable memory operation for machine learning applications
C Su, W Xu, L Zhang, R Huang, Q Huang
Solid-State Electronics 199, 108495, 2023
22023
A Novel Pulse-Width-Modulated FeFET-based Analog Content Addressable Memory with High Area-and Energy-Efficiency
W Xu, J Luo, Q Huang, R Huang
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
12023
Novel Energy-efficient Hafnia-based Ferroelectric Processing-in-Sensor with in-situ Motion Detection and Four-quarter Mutipilcation
Z Fu, K Wang, B Fu, S Xu, H Zheng, J Luo, C Su, W Xu, X Lv, Q Huang, ...
2022 International Electron Devices Meeting (IEDM), 24.5. 1-24.5. 4, 2022
12022
Novel Negative-Feedback Method for Writing Variation Suppression in FeFET-Based Computing-in-Memory Macro
W Xu, J Luo, Y Du, Q Huang, R Huang
2022 China Semiconductor Technology International Conference (CSTIC), 1-3, 2022
12022
A Novel Ferroelectric FET based Universal Content Addressable Memory with Reconfigurability for Area-and Energy-Efficient In-Memory-Searching System
W Xu, J Luo, Z Chen, B Fu, Z Fu, K Wang, Q Huang, R Huang
IEEE Electron Device Letters, 2024
2024
A Novel Small-Signal Ferroelectric Memcapacitor based Capacitive Computing-In-Memory for Area-and Energy-Efficient Quantized Neural Networks
W Xu, J Luo, B Fu, Z Fu, K Wang, C Su, Q Huang, R Huang
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024
A Novel Complementary Ferroelectric FET based Compressed Multibit Content Addressable Memory with High Area-and Energy-Efficiency
W Xu, J Luo, Z Fu, K Wang, Q Huang, R Huang
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024
Design of Ferroelectric FET-Based Capacitive-Coupling Computing-In-Memory For Binary Neural Networks
B Fu, J Luo, W Xu, Q Huang, R Huang
2023 China Semiconductor Technology International Conference (CSTIC), 1-4, 2023
2023
A Novel Ferroelectric Tunnel FET-based Time-Domain Content Addressable Memory with High Distance-Metric Linearity and Energy Efficiency for Edge Machine Learning
W Xu, J Luo, Q Huang, R Huang
2023 Silicon Nanoelectronics Workshop (SNW), 7-8, 2023
2023
The system can't perform the operation now. Try again later.
Articles 1–13