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Munseon Jang
Munseon Jang
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Cited by
Year
MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes
M Jang, KS Yun
Micro and Nano Systems Letters 5, 1-5, 2017
272017
Improving memory reliability by bounding DRAM faults: DDR5 improved reliability features
K Criss, K Bains, R Agarwal, T Bennett, T Grunzke, JK Kim, H Chung, ...
Proceedings of the International Symposium on Memory Systems, 317-322, 2020
202020
23.3 A 4.8 Gb/s/pin 2Gb LPDDR4 SDRAM with sub-100µA self-refresh current for IoT applications
N Kwak, SH Kim, KH Lee, CK Baek, MS Jang, Y Joo, SH Lee, WY Lee, ...
2017 IEEE International Solid-State Circuits Conference (ISSCC), 392-393, 2017
192017
HBM3 RAS: Enhancing resilience at scale
S Gurumurthi, K Lee, M Jang, V Sridharan, A Nygren, Y Ryu, K Sohn, ...
IEEE Computer Architecture Letters 20 (2), 158-161, 2021
172021
Piezoelectric energy harvester operated by noncontact mechanical frequency up-conversion using shell cantilever structure
M Jang, S Song, YH Park, KS Yun
Japanese Journal of Applied Physics 54 (6S1), 06FP08, 2015
142015
HBM3: Enabling Memory Resilience at Scale
S Gurumurthi, K Lee, M Jang, V Sridharan, A Nygren, Y Ryu, K Sohn, ...
CAL, 2021
42021
Memory and operation method of memory
J Munseon, H Chung
US Patent 11,462,286, 2022
32022
Memory system and operating method thereof
MS Jang, H Chung, TK Kim
US Patent 11,265,022, 2022
22022
Semiconductor device
MS Jang, SH Kim, BY Kim
US Patent App. 15/170,383, 2017
22017
Power driving device and semiconductor device including the same
MS Jang
US Patent App. 14/810,925, 2016
12016
Amplification circuit of semiconductor apparatus
MS Jang
US Patent 9,154,092, 2015
12015
Memory device including error correction device
JH Jeong, DS Kim, SW Yoon, AR RIM, MS Jang
US Patent App. 18/314,147, 2024
2024
Memory including error correction circuit and operating method thereof
JH Jeong, DS Kim, J Munseon
US Patent App. 18/170,530, 2024
2024
Error processing circuit, memory and operation method of the memory
JH Jeong, H Chung, DS Kim, J Munseon
US Patent App. 18/169,880, 2024
2024
Memory device including error correction device
JH Jeong, DS Kim, MS Jang
US Patent App. 18/080,282, 2024
2024
Memory and operation method of memory
J Munseon, HJ Chung, JR Kim
US Patent 11,928,026, 2024
2024
Memory, memory system and operation method of memory system
J Munseon, H Chung, JR Kim
US Patent App. 18/482,016, 2024
2024
Memory and operation method of memory
JH Jeong, DS Kim, J Munseon
US Patent App. 18/357,336, 2023
2023
Memory, memory system and operation method of memory system
J Munseon, H Chung, JR Kim
US Patent 11,817,169, 2023
2023
Memory, operation method of memory, and operation method of memory system
J Munseon, H Chung
US Patent App. 17/883,096, 2023
2023
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