| Optoelectronic resistive random access memory for neuromorphic vision sensors F Zhou, Z Zhou, J Chen, TH Choy, J Wang, N Zhang, Z Lin, S Yu, J Kang, ... Nature nanotechnology 14 (8), 776-782, 2019 | 591 | 2019 |
| A low energy oxide‐based electronic synaptic device for neuromorphic visual systems with tolerance to device variation S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong Advanced Materials 25 (12), 1774-1779, 2013 | 499 | 2013 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 475 | 2019 |
| Characteristics and mechanism of conduction/set process in resistance switching random-access memories N Xu, L Liu, X Sun, X Liu, D Han, Y Wang, R Han, J Kang, B Yu Applied Physics Letters 92 (23), 232112, 2008 | 433 | 2008 |
| HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture S Yu, HY Chen, B Gao, J Kang, HSP Wong ACS nano 7 (3), 2320-2325, 2013 | 344 | 2013 |
| HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector HY Chen, S Yu, B Gao, P Huang, J Kang, HSP Wong 2012 International Electron Devices Meeting, 20.7. 1-20.7. 4, 2012 | 337 | 2012 |
| Gd-doping effect on performance of based resistive switching memory devices using implantation approach H Zhang, L Liu, B Gao, Y Qiu, X Liu, J Lu, R Han, J Kang, B Yu Applied Physics Letters 98 (4), 042105, 2011 | 220 | 2011 |
| A neuromorphic visual system using RRAM synaptic devices with sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong 2012 International Electron Devices Meeting, 10.4. 1-10.4. 4, 2012 | 216 | 2012 |
| Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures M Lanza, K Zhang, M Porti, M Nafrķa, ZY Shen, LF Liu, JF Kang, D Gilmer, ... Applied Physics Letters 100 (12), 123508, 2012 | 205 | 2012 |
| Unified physical model of bipolar oxide-based resistive switching memory B Gao, B Sun, H Zhang, L Liu, X Liu, R Han, J Kang, B Yu IEEE Electron Device Letters 30 (12), 1326-1328, 2009 | 203 | 2009 |
| Ionic doping effect in resistive switching memory H Zhang, B Gao, B Sun, G Chen, L Zeng, L Liu, X Liu, J Lu, R Han, J Kang, ... Applied Physics Letters 96 (12), 123502, 2010 | 200 | 2010 |
| A physics-based compact model of metal-oxide-based RRAM DC and AC operations P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ... IEEE transactions on electron devices 60 (12), 4090-4097, 2013 | 188 | 2013 |
| RRAM crossbar array with cell selection device: A device and circuit interaction study Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ... IEEE transactions on Electron Devices 60 (2), 719-726, 2012 | 182 | 2012 |
| Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems B Gao, Y Bi, HY Chen, R Liu, P Huang, B Chen, L Liu, X Liu, S Yu, ... ACS nano 8 (7), 6998-7004, 2014 | 179 | 2014 |
| Reconfigurable nonvolatile logic operations in resistance switching crossbar array for large‐scale circuits P Huang, J Kang, Y Zhao, S Chen, R Han, Z Zhou, Z Chen, W Ma, M Li, ... Advanced Materials 28 (44), 9758-9764, 2016 | 176 | 2016 |
| Stochastic learning in oxide binary synaptic device for neuromorphic computing S Yu, B Gao, Z Fang, H Yu, J Kang, HSP Wong Frontiers in neuroscience 7, 186, 2013 | 171 | 2013 |
| Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology B Gao, HW Zhang, S Yu, B Sun, LF Liu, XY Liu, Y Wang, RQ Han, ... 2009 Symposium on VLSI Technology, 30-31, 2009 | 168 | 2009 |
| Oxide-based RRAM switching mechanism: A new ion-transport-recombination model B Gao, S Yu, N Xu, LF Liu, B Sun, XY Liu, RQ Han, JF Kang, B Yu, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 167 | 2008 |
| Fermi pinning-induced thermal instability of metal-gate work functions HY Yu, C Ren, YC Yeo, JF Kang, XP Wang, HHH Ma, MF Li, DSH Chan, ... IEEE Electron Device Letters 25 (5), 337-339, 2004 | 165 | 2004 |
| Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies C Li, B Gao, Y Yao, X Guan, X Shen, Y Wang, P Huang, L Liu, X Liu, J Li, ... Advanced Materials 29 (10), 1602976, 2017 | 163 | 2017 |
