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Xiaodi Jin
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3.2-mW ultra-low-power 173–207-GHz amplifier with 130-nm SiGe HBTs operating in saturation
Y Zhang, W Liang, X Jin, M Krattenmacher, S Falk, P Sakalas, ...
IEEE Journal of Solid-State Circuits 55 (6), 1471-1481, 2020
302020
Advanced SiGe:C HBTs at cryogenic temperatures and their compact modeling with temperature scaling
X Jin, M Müller, P Sakalas, A Mukherjee, Y Zhang, M Schröter
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 7 (2), 2021
162021
12-mW 97-GHz low-power downconversion mixer with 0.7-V supply voltage
Y Zhang, W Liang, P Sakalas, A Mukherjee, X Jin, J Krause, M Schröter
IEEE Microwave and Wireless Components Letters 29 (4), 279-281, 2019
122019
Methods for Extracting the Temperature-and Power-Dependent Thermal Resistance for SiGe and III-V HBTs From DC Measurements: A Review and Comparison Across Technologies
MS Markus Müller , Vincenzo d’Alessandro , Sophia Falk, Christoph Weimer ...
IEEE Transactions on Electron Devices, 2022
82022
A physics-based analytical formulation for the tunneling current through the base of bipolar transistors operating at cryogenic temperatures
M Schröter, X Jin
IEEE transactions on electron devices 70 (1), 247-253, 2022
72022
Compact modeling of SiGe HBTs for design of cryogenic control and readout circuits for quantum computing
H Ying, SG Rao, JW Teng, M Frounchi, M Müller, X Jin, M Schröter, ...
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2020
72020
Characterization of dynamic large-signal operating limits and long-term RF reliability of SiGe HBTs
C Weimer, X Jin, GG Fischer, M Schröter
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022
62022
LO Chain (× 12) Integrated 190-GHz Low-Power SiGe Receiver With 49-dB Conversion Gain and 171-mW DC Power Consumption
Y Zhang, W Liang, C Esposito, X Jin, P Sakalas, M Schröter
IEEE Transactions on Microwave Theory and Techniques 69 (3), 1943-1954, 2021
62021
66 GHz 11.5 mW low-power SiGe frequency quadrupler operating at 300 K and 4 K
Y Zhang, X Jin, W Liang, P Sakalas, M Schröter
2022 14th German Microwave Conference (GeMiC), 100-103, 2022
42022
X- and Ku-Band SiGe-HBT Voltage-Controlled Ring Oscillators for Cryogenic Applications
E Vardarli, A Mukherjee, X Jin, P Sakalas, M Schröter
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 7 (2), 2021
42021
Thermal impedance of SiGe HBTs: Characterization and modeling
X Jin, G Liang, Y Zimmermann, G Fischer, C Weimer, M Krattenmacher, ...
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2022
32022
Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K
X Jin, C Weimer, Y Zhang, M Schröter
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2020
32020
Characterization and compact modeling of the thermal resistance of SiGe HBTs from cryogenic to room temperature
X Jin, G Liang, M Müller, M Schröter
IEEE Transactions on Electron Devices, 2023
12023
A Q-band SiGe-HBT cryogenic colpitts VCO for frequency-division multiplexed quantum computing
E Vardarli, X Jin, AYK Chen, K Aufinger, M Schröter
2023 IEEE/MTT-S International Microwave Symposium-IMS 2023, 549-552, 2023
12023
A Cryogenic 561 W Ultralow-Power 56–62 GHz Low Noise Amplifier in 130-nm SiGe HBTs
B Peng, X Jin, K Aufinger, M Schröter
IEEE Microwave and Wireless Technology Letters, 2023
2023
Modeling and Parameter Extraction of SiGe HBTs at Cryo-genic Temperatures using Open-Source Tools DMT and VerilogAE
X Jin, M Müller, M Krattenmacher, P Kuthe, C Weimer, M Schröter
2022
Characterization and modeling of thermal impedance for advanced SiGe HBT
X Jin, G Liang, M Schröter
33rd workshop AKB, 2021
2021
Temperature dependent modeling of sub-mm-wave SiGe HBT
X Jin, N Weddeler, M Schröter
HICUM Workshop 2018, 2018
2018
Contributions to TCAD and compact modeling of SiGe HBTs at room and cryogenic temperatures
X Jin
Chair for Electron Devices and Integrated Circuits, Dresden University of …, 2018
2018
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Articles 1–19