| Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3–SiC Interfaces Z Cheng, F Mu, T You, W Xu, J Shi, ME Liao, Y Wang, K Huynh, T Suga, ... ACS Applied Materials & Interfaces 12 (40), 44943-44951, 2020 | 86 | 2020 |
| First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process W Xu, Y Wang, T You, X Ou, G Han, H Hu, S Zhang, F Mu, T Suga, ... 2019 IEEE International Electron Devices Meeting (IEDM), 12.5. 1-12.5. 4, 2019 | 71 | 2019 |
| β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process YB Wang, WH Xu, TG You, FW Mu, HD Hu, Y Liu, H Huang, T Suga, ... Science China Physics, Mechanics & Astronomy 63 (7), 277311, 2020 | 43 | 2020 |
| Thermal visualization of buried interfaces enabled by ratio signal and steady-state heating of time-domain thermoreflectance Z Cheng, F Mu, X Ji, T You, W Xu, T Suga, X Ou, DG Cahill, S Graham ACS Applied Materials & Interfaces 13 (27), 31843-31851, 2021 | 25 | 2021 |
| Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC W Xu, T You, Y Wang, Z Shen, K Liu, L Zhang, H Sun, R Qian, Z An, F Mu, ... Fundamental Research 1 (6), 691-696, 2021 | 23 | 2021 |
| Solar-Blind Photodetector Based on Single Crystal Ga2O3 Film Prepared by a Unique Ion-Cutting Process Q Ren, W Xu, Z Shen, T You, Q Liu, C Liu, L Zhao, L Chen, W Yu ACS Applied Electronic Materials 3 (1), 451-460, 2020 | 22 | 2020 |
| Channel Properties of Ga₂O₃-on-SiC MOSFETs Y Wang, W Xu, G Han, T You, F Mu, H Hu, Y Liu, X Zhang, H Huang, ... IEEE Transactions on Electron Devices 68 (3), 1185-1189, 2021 | 20 | 2021 |
| Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga2O3 ()-Al2O3-Si Substrate Y Wang, W Xu, G Han, T You, F Mu, H Hu, Y Liu, X Zhang, H Huang, ... Journal of Physics D: Applied Physics 54 (3), 034004, 2020 | 18 | 2020 |
| Recessed-Gate Ga₂O₃-on-SiC MOSFETs Demonstrating a Stable Power Figure of Merit of 100 mW/cm² Up to 200° C Y Wang, G Han, W Xu, T You, H Hu, Y Liu, X Zhang, H Huang, X Ou, X Ma, ... IEEE Transactions on Electron Devices 69 (4), 1945-1949, 2022 | 16 | 2022 |
| The effect of oxygen annealing on characteristics of β-Ga2O3 solar-blind photodetectors on SiC substrate by ion-cutting process Z Shen, W Xu, Y Xu, H Huang, J Lin, T You, J Ye, X Ou Journal of Alloys and Compounds 889, 161743, 2021 | 16 | 2021 |
| Thermodynamics of Ion-Cutting of β-Ga2O3 and Wafer-Scale Heterogeneous Integration of a β-Ga2O3 Thin Film onto a Highly Thermal Conductive SiC Substrate W Xu, T You, F Mu, Z Shen, J Lin, K Huang, M Zhou, A Yi, Z Qu, T Suga, ... ACS Applied Electronic Materials 4 (1), 494-502, 2021 | 14 | 2021 |
| Realization of wafer-scale single-crystalline GaN film on CMOS-compatible Si (100) substrate by ion-cutting technique H Shi, K Huang, F Mu, T You, Q Ren, J Lin, W Xu, T Jin, H Huang, A Yi, ... Semiconductor Science and Technology 35 (12), 125004, 2020 | 14 | 2020 |
| Wafer-scale single-crystalline β-Ga2O3 thin film on SiC substrate by ion-cutting technique with hydrophilic wafer bonding at elevated temperatures Z Shen, W Xu, Y Chen, J Lin, Y Xie, K Huang, T You, G Han, X Ou Science China Materials 66 (2), 756-763, 2023 | 9 | 2023 |
| High-voltage β-Ga2O3 RF MOSFETs with a Shallowly-implanted 2DEG-like Channel X Yu, H Gong, J Zhou, Z Shen, W Xu, T You, J Wang, S Zhang, Y Wang, ... IEEE Electron Device Letters, 2023 | 6 | 2023 |
| Comparative study of the ion-slicing mechanism of Y-cut LiNbO3 K Huang, Z Li, Y Yan, X Zhao, W Li, T You, S Zhang, H Zhou, J Lin, W Xu, ... AIP Advances 9 (8), 2019 | 6 | 2019 |
| Heterointegrated Ga2O3-on-SiC RF MOSFETs with fT/fmax of 47/51 GHz by Ion-cutting Process X Yu, W Xu, Y Wang, B Qiao, R Shen, J Zhou, Z Li, T You, Z Shen, ... IEEE Electron Device Letters, 2023 | 4 | 2023 |
| Channel mobility properties of β-Ga2O3 MOSFETs on Si substrate fabricated by ion-cutting process Y Wang, W Xu, G Han, T You, H Hu, Y Liu, H Huang, X Ou, X Ma, Y Hao 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 4 | 2021 |
| Wafer-scale Heterogeneous Integration of Monocrystalline\b {eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique Z Cheng, F Mu, T You, W Xu, J Shi, ME Liao, Y Wang, K Huynh, T Suga, ... arXiv preprint arXiv:2005.13098, 2020 | 3 | 2020 |
| Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si (100) substrate by ion-cutting technology H Shi, A Yi, J Ding, X Liu, Q Qin, J Yi, J Hu, M Wang, D Cai, J Wang, K Xu, ... Science China Information Sciences 66 (11), 219403, 2023 | 2 | 2023 |
| Unique Bias Stress Instability of Heterogeneous Ga2O3-on-SiC MOSFET C Liu, Y Wang, W Xu, X Jia, S Huang, Y Li, B Li, Z Luo, C Fang, Y Liu, ... IEEE Electron Device Letters, 2023 | 2 | 2023 |
