| Temperature dependent I–V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung’s model D Korucu, A Turut, H Efeoglu Physica B: Condensed Matter 414, 35-41, 2013 | 61 | 2013 |
| The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes (SBDs) prepared by photolithography technique in the wide frequency range D Korucu, A Turut, Ş Altındal Current applied physics 13 (6), 1101-1108, 2013 | 51 | 2013 |
| The effects of the time-dependent on the characteristic parameters of polypyrrole/p-type Si/Al diode M Sağlam, D Korucu, A Türüt Polymer 45 (21), 7335-7340, 2004 | 35 | 2004 |
| Current–voltage–temperature characteristics of Au/p-InP Schottky barrier diode D Korucu, S Duman Thin Solid Films 531, 436-441, 2013 | 32 | 2013 |
| Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K D Korucu, H Efeoglu, A Turut, S Altindal Materials science in semiconductor processing 15 (5), 480-485, 2012 | 27 | 2012 |
| Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes D Korucu, A Turut, R Turan, Ş Altindal Materials science in semiconductor processing 16 (2), 344-351, 2013 | 26 | 2013 |
| Temperature-dependent current-conduction mechanisms in Au/n-InP Schottky barrier diodes (SBDs) D Korucu, TS Mammadov Journal of Optoelectronics and Advanced Materials 14 (1), 41, 2012 | 23 | 2012 |
| Spin-triplet supercurrent in Josephson junctions containing a synthetic antiferromagnet with perpendicular magnetic anisotropy JA Glick, S Edwards, D Korucu, V Aguilar, BM Niedzielski, R Loloee, ... Physical Review B 96 (22), 224515, 2017 | 21 | 2017 |
| Temperature dependence of Schottky diode characteristics prepared with photolithography technique D Korucu, A Turut International Journal of Electronics 101 (11), 1595-1606, 2014 | 21 | 2014 |
| Frequency and temperature dependent interface states and series resistance in Au/SiO2/p-Si (MIS) Diode D Korucu, S Duman Science of advanced materials 7 (7), 1291-1297, 2015 | 16 | 2015 |
| Origin of anomalous peak and negative capacitance in the forward bias C–V characteristics of Au/n-InP Schottky barier diodes (SBDs) D Korucu, Ş Altindal, TS Mammadov, S Özçelik J. Optoelectron. Adv. Mater. 11 (2), 192-196, 2009 | 14 | 2009 |
| Spin-polarized triplet supercurrent in Josephson junctions with perpendicular ferromagnetic layers V Aguilar, D Korucu, JA Glick, R Loloee, WP Pratt Jr, NO Birge Physical Review B 102 (2), 024518, 2020 | 13 | 2020 |
| The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography D Korucu, S Duman, A Turut Materials Science in semiconductor processing 30, 393-399, 2015 | 12 | 2015 |
| Measurement of effective atomic number of gunshot residues using scattering of gamma rays D Yılmaz, A Turşucu, Z Uzunoğlu, D Korucu Radiation Physics and Chemistry 102, 68-71, 2014 | 11 | 2014 |
| On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique D Korucu, A Turut, R Turan, Ş Altindal Science China Physics, Mechanics and Astronomy 55, 1604-1612, 2012 | 10 | 2012 |
| The frequency dependent electrical characteristics of Sn/p-InP Schottky barrier diodes (SBDs) D Korucu, S Altindal, TS Mammadov, S Oezcelik Optoelectron Adv Mater-RC 2 (9), 525-529, 2008 | 9 | 2008 |
| Temperature dependent behavior of Sn/p-InP Schottky barrier diodes D Korucu, Ş Altindal, TS Mammadov, S Oezcelik OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS 2 (12), 766-769, 2008 | 7 | 2008 |
| Analysis of interface states and series resistances in Au/p-InP structures prepared with photolithography technique D Korucu, Ş Karataş, A Türüt Indian Journal of Physics 87, 733-740, 2013 | 6 | 2013 |
| Fabrication and electrical characterization of Au/Pyronine-G/p-Si diode S Duman, FS Ozcelik, B Gurbulak, D Korucu, O Baris, G Turgut Materials science in semiconductor processing 28, 20-25, 2014 | 5 | 2014 |
| On the temperature dependent anomalous peak and negative capacitance in Au/n-InP Schottky barrier diodes D Korucu, Ş Altindal, TS Mammadov, S Oezcelik Optoelectron. Adv. Mater. Rapid Commun 3, 56-59, 2009 | 5 | 2009 |
