| Energy-efficient Mott activation neuron for full-hardware implementation of neural networks S Oh, Y Shi, J Del Valle, P Salev, Y Lu, Z Huang, Y Kalcheim, IK Schuller, ... Nature nanotechnology 16 (6), 680-687, 2021 | 107 | 2021 |
| The impact of resistance drift of phase change memory (PCM) synaptic devices on artificial neural network performance S Oh, Z Huang, Y Shi, D Kuzum IEEE Electron Device Letters 40 (8), 1325-1328, 2019 | 40 | 2019 |
| Performance prospects of deeply scaled spin-transfer torque magnetic random-access memory for in-memory computing Y Shi, S Oh, Z Huang, X Lu, SH Kang, D Kuzum IEEE Electron Device Letters 41 (7), 1126-1129, 2020 | 28 | 2020 |
| Adaptive quantization as a device-algorithm co-design approach to improve the performance of in-memory unsupervised learning with SNNs Y Shi, Z Huang, S Oh, N Kaslan, J Song, D Kuzum IEEE Transactions on Electron Devices 66 (4), 1722-1728, 2019 | 11 | 2019 |
| Decoding of cortex-wide brain activity from local recordings of neural potentials X Liu, C Ren, Z Huang, M Wilson, JH Kim, Y Lu, M Ramezani, ... Journal of neural engineering 18 (6), 066009, 2021 | 9 | 2021 |
