Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key V Mootheri, A Leonhardt, D Verreck, I Asselberghs, C Huyghebaert, ... Nanotechnology 32 (13), 135202, 2021 | 20 | 2021 |
Graphene based Van der Waals contacts on MoS2 field effect transistors V Mootheri, G Arutchelvan, S Banerjee, S Sutar, A Leonhardt, ME Boulon, ... 2D Materials 8 (1), 015003, 2020 | 19 | 2020 |
Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS2 A Leonhardt, CJL de la Rosa, T Nuytten, L Banszerus, S Sergeant, ... Advanced Materials Interfaces 7 (18), 2000413, 2020 | 13 | 2020 |
Trap Density Assessment on Multilayer WS2 using Power-Dependent Indirect Photoluminescence CHSDG Alessandra Leonhardt, Thomas Nuytten, César Javier Lockhart de la Rosa ... ECS Journal of Solid State Science and Technology, 2020 | 2 | 2020 |
Large> 0.2 dB/µm Modulation Depth Double-Layer Graphene Electro-Absorption Modulator on Slot waveguide C Wu, Z Wang, J Jussot, S Brems, V Mootheri, C Huyghebaert, ... CLEO: Science and Innovations, SF4K. 4, 2022 | 1 | 2022 |
Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the DIT (E) profile V Mootheri, X Wu, D Cott, B Groven, M Heyns, I Asselberghs, I Radu, ... Solid-State Electronics 183, 108035, 2021 | 1 | 2021 |
Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements A Minj, V Mootheri, S Banerjee, A Nalin Mehta, J Serron, T Hantschel, ... ACS nano 18 (15), 10653-10666, 2024 | | 2024 |
New Materials for Memory Applications by Atomic Layer Deposition A Illiberi, A Leonhardt, M Surman, L Lukose, R Ramachandra, V Mootheri, ... Electrochemical Society Meeting Abstracts 244, 1437-1437, 2023 | | 2023 |
Methods and systems for forming memory devices and components thereof A Leonhardt, M Surman, P Sippola, RK Ramachandran, C Dezelah, ... US Patent App. 18/319,933, 2023 | | 2023 |
High-efficiency dual single layer graphene modulator integrated on slot waveguides C Wu, T Reep, S Brems, J Jussot, V Mootheri, J Van Campenhout, ... Optics Express 31 (22), 36872-36882, 2023 | | 2023 |
Contact Interface Characterization of Graphene contacted MoS2 FETs V Mootheri, A Minj, G Arutchelvan, A Leonhardt, I Asselberghs, M Heyns, ... 2021 IEEE International Interconnect Technology Conference (IITC), 1-3, 2021 | | 2021 |
On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation D Lin, X Wu, V Mootheri, D Cott, B Groven, P Morin, I Asselberghs, I Radu 2021 Device Research Conference (DRC), 1-2, 2021 | | 2021 |
Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key V Koladi Mootheri, A Leonhardt, D Verreck, I Asselberghs, C Huyghebaert, ... IOP PUBLISHING LTD, 2021 | | 2021 |
Graphene based Van der Waals contacts on MoS (2) field effect transistors V Koladi Mootheri, G Arutchelvan, S Banerjee, S Sutar, A Leonhardt, ... IOP Publishing Ltd, 2021 | | 2021 |
(Invited) Impact of Substrates and Interfaces on 2D TMDC Properties A Leonhardt, V Koladi Mootheri, CJ Lockhart de la Rosa, T Nuytten, ... Electrochemical Society Meeting Abstracts 237, 845-845, 2020 | | 2020 |
300mm wafer level WS2 p-MOS capacitor characterization, smulation, and analysis V Koladi Mootheri, A Okuyama, Q Smets, T Schram, I Asselberghs, ... | | 2020 |
Tuning the Electronic Characteristics of Monolayer MoS2‐Based Transistors by Ion Irradiation: The Role of the Substrate Z Fekri, P Chava, G Hlawacek, M Ghorbani‐Asl, S Kretschmer, W Awan, ... Advanced Electronic Materials, 2400037, 0 | | |