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Vivek Koladi Mootheri
Vivek Koladi Mootheri
ASM, Corporate R&D
Verified email at asm.com
Title
Cited by
Cited by
Year
Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key
V Mootheri, A Leonhardt, D Verreck, I Asselberghs, C Huyghebaert, ...
Nanotechnology 32 (13), 135202, 2021
202021
Graphene based Van der Waals contacts on MoS2 field effect transistors
V Mootheri, G Arutchelvan, S Banerjee, S Sutar, A Leonhardt, ME Boulon, ...
2D Materials 8 (1), 015003, 2020
192020
Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS2
A Leonhardt, CJL de la Rosa, T Nuytten, L Banszerus, S Sergeant, ...
Advanced Materials Interfaces 7 (18), 2000413, 2020
132020
Trap Density Assessment on Multilayer WS2 using Power-Dependent Indirect Photoluminescence
CHSDG Alessandra Leonhardt, Thomas Nuytten, César Javier Lockhart de la Rosa ...
ECS Journal of Solid State Science and Technology, 2020
22020
Large> 0.2 dB/µm Modulation Depth Double-Layer Graphene Electro-Absorption Modulator on Slot waveguide
C Wu, Z Wang, J Jussot, S Brems, V Mootheri, C Huyghebaert, ...
CLEO: Science and Innovations, SF4K. 4, 2022
12022
Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the DIT (E) profile
V Mootheri, X Wu, D Cott, B Groven, M Heyns, I Asselberghs, I Radu, ...
Solid-State Electronics 183, 108035, 2021
12021
Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements
A Minj, V Mootheri, S Banerjee, A Nalin Mehta, J Serron, T Hantschel, ...
ACS nano 18 (15), 10653-10666, 2024
2024
New Materials for Memory Applications by Atomic Layer Deposition
A Illiberi, A Leonhardt, M Surman, L Lukose, R Ramachandra, V Mootheri, ...
Electrochemical Society Meeting Abstracts 244, 1437-1437, 2023
2023
Methods and systems for forming memory devices and components thereof
A Leonhardt, M Surman, P Sippola, RK Ramachandran, C Dezelah, ...
US Patent App. 18/319,933, 2023
2023
High-efficiency dual single layer graphene modulator integrated on slot waveguides
C Wu, T Reep, S Brems, J Jussot, V Mootheri, J Van Campenhout, ...
Optics Express 31 (22), 36872-36882, 2023
2023
Contact Interface Characterization of Graphene contacted MoS2 FETs
V Mootheri, A Minj, G Arutchelvan, A Leonhardt, I Asselberghs, M Heyns, ...
2021 IEEE International Interconnect Technology Conference (IITC), 1-3, 2021
2021
On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation
D Lin, X Wu, V Mootheri, D Cott, B Groven, P Morin, I Asselberghs, I Radu
2021 Device Research Conference (DRC), 1-2, 2021
2021
Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key
V Koladi Mootheri, A Leonhardt, D Verreck, I Asselberghs, C Huyghebaert, ...
IOP PUBLISHING LTD, 2021
2021
Graphene based Van der Waals contacts on MoS (2) field effect transistors
V Koladi Mootheri, G Arutchelvan, S Banerjee, S Sutar, A Leonhardt, ...
IOP Publishing Ltd, 2021
2021
(Invited) Impact of Substrates and Interfaces on 2D TMDC Properties
A Leonhardt, V Koladi Mootheri, CJ Lockhart de la Rosa, T Nuytten, ...
Electrochemical Society Meeting Abstracts 237, 845-845, 2020
2020
300mm wafer level WS2 p-MOS capacitor characterization, smulation, and analysis
V Koladi Mootheri, A Okuyama, Q Smets, T Schram, I Asselberghs, ...
2020
Tuning the Electronic Characteristics of Monolayer MoS2‐Based Transistors by Ion Irradiation: The Role of the Substrate
Z Fekri, P Chava, G Hlawacek, M Ghorbani‐Asl, S Kretschmer, W Awan, ...
Advanced Electronic Materials, 2400037, 0
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