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Emanuel Ber
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Improved Current Density and Contact Resistance in Bilayer MoSe2 Field Effect Transistors by AlOx Capping
D Somvanshi, E Ber, CS Bailey, E Pop, E Yalon
ACS applied materials & interfaces 12 (32), 36355-36361, 2020
342020
Measurement of the variable surface charge concentration in gallium nitride and implications on device modeling and physics
E Ber, B Osman, D Ritter
IEEE Transactions on Electron Devices 66 (5), 2100-2105, 2019
172019
Uncovering the different components of contact resistance to atomically thin semiconductors
E Ber, RW Grady, E Pop, E Yalon
Advanced Electronic Materials 9 (6), 2201342, 2023
102023
Joule-heating induced phase transition in 1T-TaS2 near room temperature probed by thermal imaging of power dissipation
Y Jarach, L Rodes, E Ber, E Yalon, A Kanigel
Applied Physics Letters 120 (8), 2022
42022
Drift of Schottky barrier height in phase change materials
RG Nir-Harwood, G Cohen, A Majumdar, R Haight, E Ber, L Gignac, ...
ACS nano 18 (11), 8029-8037, 2024
22024
Spontaneous Raman scattering from vibrational polaritons is obscured by reservoir states
B Cohn, T Filippov, E Ber, L Chuntonov
The Journal of Chemical Physics 159 (10), 2023
12023
Exploring Charge Trapping Dynamics in Si: HfO₂-FeFETs by Temperature-Dependent Electrical Characterization
MM Dahan, E Ber, O Levit, H Mulaosmanovic, S Dünkel, J Müller, S Beyer, ...
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024
High-Speed Electrical Transient Thermometry of Monolayer MoS2
E Ber, E Yalon
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024
Ionic–electronic dynamics in an electrochemical gate stack toward high-speed artificial synapses
O Levit, E Ber, MM Dahan, Y Keller, E Yalon
Applied Physics Letters 123 (21), 2023
2023
High Number of Transport Modes: A Requirement for Contact Resistance Reduction to Atomically Thin Semiconductors
E Ber, RW Grady, E Pop, E Yalon
IEEE Transactions on Electron Devices 70 (4), 1829-1834, 2023
2023
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