| Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse SG Kim, SH Kim, J Park, GS Kim, JH Park, KC Saraswat, J Kim, HY Yu ACS nano 13 (9), 10294-10300, 2019 | 99 | 2019 |
| Hysteresis modulation on van der Waals‐based ferroelectric field‐effect transistor by interfacial passivation technique and its application in optic neural networks H Jeon, SG Kim, J Park, SH Kim, E Park, J Kim, HY Yu Small 16 (49), 2004371, 2020 | 34 | 2020 |
| Nitrogen-induced filament confinement technique for a highly reliable hafnium-based electrochemical metallization threshold switch and its application to flexible logic circuits JH Park, SH Kim, SG Kim, K Heo, HY Yu ACS applied materials & interfaces 11 (9), 9182-9189, 2019 | 32 | 2019 |
| Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior KH Han, GS Kim, J Park, SG Kim, JH Park, HY Yu ACS applied materials & interfaces 11 (23), 20949-20955, 2019 | 19 | 2019 |
| Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure SH Kim, KH Han, GS Kim, SG Kim, J Kim, HY Yu ACS applied materials & interfaces 11 (6), 6230-6237, 2019 | 19 | 2019 |
| An artificial neuron using a bipolar electrochemical metallization switch and its enhanced spiking properties through filament confinement T Kim, SH Kim, JH Park, J Park, E Park, SG Kim, HY Yu Advanced Electronic Materials 7 (1), 2000410, 2021 | 16 | 2021 |
| Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor DG Jin, SH Kim, SG Kim, J Park, E Park, HY Yu Small 17 (30), 2100242, 2021 | 15 | 2021 |
| Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors SG Kim, SH Kim, GS Kim, H Jeon, T Kim, HY Yu Advanced Science 8 (12), 2100208, 2021 | 12 | 2021 |
| Analysis of the Thermal Degradation Effect on a HfO2-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System J Park, E Park, SG Kim, DG Jin, HY Yu ACS Applied Electronic Materials 3 (12), 5584-5591, 2021 | 11 | 2021 |
| Super steep-switching (SS≈ 2 mV/decade) phase-FinFET with Pb (Zr0. 52Ti0. 48) O3 threshold switching device J Shin, E Ko, J Park, SG Kim, JW Lee, HY Yu, C Shin Applied Physics Letters 113 (10), 2018 | 8 | 2018 |
| Ultralow Schottky barrier height achieved by using molybdenum disulfide/dielectric stack for source/drain contact SH Kim, KH Han, E Park, SG Kim, HY Yu ACS applied materials & interfaces 11 (37), 34084-34090, 2019 | 7 | 2019 |
| Low-temperature hybrid dopant activation technique using pulsed green laser for heavily-doped n-type SiGe source/drain SG Kim, GS Kim, SH Kim, HY Yu IEEE Electron Device Letters 39 (12), 1828-1831, 2018 | 5 | 2018 |
| Improvement of polarization switching in ferroelectric transistor by interface trap reduction for brain-inspired artificial synapses DG Jin, SG Kim, H Jeon, EJ Park, SH Kim, JY Kim, HY Yu Materials Today Nano 22, 100320, 2023 | 4 | 2023 |
| Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor … S Song, SH Kim, SG Kim, KH Han, H Kim, HY Yu Journal of Alloys and Compounds 937, 168327, 2023 | 2 | 2023 |
| Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe2 Insertion Layer MS Kim, E Park, SG Kim, JH Park, SH Kim, KH Han, HY Yu Advanced Materials Interfaces 10 (7), 2202296, 2023 | 2 | 2023 |
| Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide JH Kim, SG Kim, SH Kim, KH Han, J Kim, HY Yu ACS Applied Materials & Interfaces 15 (26), 31608-31616, 2023 | 1 | 2023 |
| Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor SH Hwang, SH Kim, SG Kim, MS Kim, KH Han, S Song, JH Kim, E Park, ... Materials Today Advances 18, 100367, 2023 | | 2023 |
| An Electrical Analysis of a Metal-Interlayer-Semiconductor Structure on High-Quality Si1− x Ge x Films for Non-Alloyed Ohmic Contact SG Kim, GS Kim, SH Kim, SW Kim, J Park, HY Yu Journal of Nanoscience and Nanotechnology 17 (10), 7323-7326, 2017 | | 2017 |
Kim, Gwang-SikSamsung ElectronicsVerified email at korea.ac.kr
