| Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling M Fregolent, E Brusaterra, C De Santi, K Tetzner, J Würfl, G Meneghesso, ... Applied Physics Letters 120 (16), 2022 | 12 | 2022 |
| Optimization of vertical GaN drift region layers for avalanche and punch-through pn-diodes E Brusaterra, EB Treidel, F Brunner, M Wolf, A Thies, J Würfl, O Hilt IEEE Electron Device Letters 44 (3), 388-391, 2023 | 10 | 2023 |
| Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN L Tadmor, E Brusaterra, EB Treidel, F Brunner, N Bickel, ... Semiconductor Science and Technology 38 (1), 015006, 2022 | 7 | 2022 |
| Review on the degradation of GaN-based lateral power transistors C De Santi, M Buffolo, I Rossetto, T Bordignon, E Brusaterra, A Caria, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 1, 100018, 2021 | 7 | 2021 |
| Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs M Fregolent, E Brusaterra, C De Santi, K Tetzner, J Würfl, G Meneghesso, ... Oxide-based Materials and Devices XIII 12002, 40-45, 2022 | 3 | 2022 |
| Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric M Fregolent, E Brusaterra, C De Santi, K Tetzner, J Würfl, G Meneghesso, ... Applied Physics Letters 123 (10), 2023 | 2 | 2023 |
| Investigation of atomic layer deposition methods of Al2O3 on n-GaN L Tadmor, SST Vandenbroucke, E Bahat Treidel, E Brusaterra, P Plate, ... Journal of Applied Physics 135 (8), 2024 | 1 | 2024 |
| Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical AlO/GaN MOS Capacitors N Zagni, M Fregolent, G Verzellesi, A Marcuzzi, C De Santi, ... IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag H Yazdani, C Zervos, P Beleniotis, E Brusaterra, O Hilt, M Rudolph, ... physica status solidi (a), 2300885, 2024 | | 2024 |
| Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack C De Santi, M Fregolent, E Brusaterra, K Tetzner, J Würfl, M Buffolo, ... Oxide-based Materials and Devices XV 12887, 57-60, 2024 | | 2024 |
| Laser-lift-off of GaN-based transistors with an ultra-short-pulsed deep UV laser L Deriks, EB Treidel, E Brandl, J Bravin, E Brusaterra, S Danylyuk Laser Applications in Microelectronic and Optoelectronic Manufacturing …, 2024 | | 2024 |
| GaN Vertical Devices: challenges for high performance and stability M Meneghini, M Fregolent, N Zagni, C DE SANTI, EB Treidel, ... Proceedings of ICNS-14 conference, 2023 | | 2023 |
| In Vacuo XPS Study of Al2O3 ALD Deposition Processes on n-GaN S Vandenbroucke, E Bahat Treidel, L Tadmor, E Brusaterra, P Plate, ... EuroCVD-BalticALD 2023, 2023 | | 2023 |
| Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini a) Department of Information Engineering, University of Padova, Padova, Italy b) Ferdinand-Braun-Institut gGmbH … M Fregolent, E Brusaterra, C De Santi, K Tetzner, J Würfl Proc. of SPIE Vol 12002, 1200206-1, 2022 | | 2022 |
| GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices F Brunner, E Brusaterra, E Bahat‐Treidel, O Hilt, M Weyers physica status solidi (RRL)–Rapid Research Letters, 2400013, 0 | | |
| Drift Region Epitaxy Development and Characterization for High Blocking Strength and Low Specific Resistance in Vertical GaN Based Devices EB Treidel, F Brunner, E Brusaterra, M Wolf, A Thies, J Würfl, O Hilt | | |
| Experimental characterization of Gallium Oxide lateral MOSFETs and modelling of parameter instabilities. E BRUSATERRA | | |
Manuel FregolentUniversità degli Studi di PadovaVerified email at dei.unipd.it
