| A review of techniques for polishing and planarizing chemically vapor-deposited (CVD) diamond films and substrates AP Malshe, BS Park, WD Brown, HA Naseem Diamond and related materials 8 (7), 1198-1213, 1999 | 290 | 1999 |
| An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 2016 | 241 | 2016 |
| Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ... Applied Physics Letters 105 (15), 2014 | 220 | 2014 |
| Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ... Optics express 24 (5), 4519-4531, 2016 | 142 | 2016 |
| Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ... Journal of Applied Physics 119 (10), 2016 | 137 | 2016 |
| Aluminuminduced crystallization and counterdoping of phosphorousdoped hydrogenated amorphous silicon at low temperatures MS Haque, HA Naseem, WD Brown Journal of applied physics 79 (10), 7529-7536, 1996 | 121 | 1996 |
| Process and apparatus for applying charged particles to a substrate, process for forming a layer on a substrate, products made therefrom WD Brown, RA Beera, AP Malshe, HA Naseem US Patent 6,544,599, 2003 | 108 | 2003 |
| Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ... Applied Physics Letters 104 (24), 2014 | 101 | 2014 |
| Competition of optical transitions between direct and indirect bandgaps in Ge1− xSnx W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ... Applied Physics Letters 105 (5), 2014 | 97 | 2014 |
| Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ... Optics express 22 (13), 15639-15652, 2014 | 96 | 2014 |
| Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ... ECS Transactions 64 (6), 711, 2014 | 95 | 2014 |
| Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ... Journal of Applied Physics 120 (2), 2016 | 90 | 2016 |
| Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ... Applied Physics Letters 105 (22), 2014 | 87 | 2014 |
| Infrared studies of hydrogenated amorphous carbon (aC: H) and its alloys (aC: H, N, F) S Liu, S Gangopadhyay, G Sreenivas, SS Ang, HA Naseem Physical Review B 55 (19), 13020, 1997 | 85 | 1997 |
| Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications A Mosleh, SA Ghetmiri, BR Conley, M Hawkridge, M Benamara, A Nazzal, ... Journal of electronic materials 43, 938-946, 2014 | 83 | 2014 |
| A critical review of chemical vapor-deposited (CVD) diamond for electronic applications TA Railkar, WP Kang, H Windischmann, AP Malshe, HA Naseem, ... Critical reviews in solid state and materials sciences 25 (3), 163-277, 2000 | 77 | 2000 |
| A preliminary investigation of the effect of post-deposition polishing of diamond films on the machining behavior of diamond-coated cutting tools DG Bhat, DG Johnson, AP Malshe, H Naseem, WD Brown, LW Schaper, ... Diamond and Related materials 4 (7), 921-929, 1995 | 65 | 1995 |
| Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ... Journal of Crystal Growth 463, 128-133, 2017 | 64 | 2017 |
| Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells HA Naseem, MS Haque, WD Brown US Patent 6,339,013, 2002 | 63 | 2002 |
| A comparison of mechanical lapping versus chemical-assisted mechanical polishing and planarization of chemical vapor deposited (CVD) diamond CD Ollison, WD Brown, AP Malshe, HA Naseem, SS Ang Diamond and Related Materials 8 (6), 1083-1090, 1999 | 61 | 1999 |
