| The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011 | 513 | 2011 |
| A two-stage model for negative bias temperature instability T Grasser, B Kaczer, W Goes, T Aichinger, P Hehenberger, M Nelhiebel 2009 IEEE international reliability physics symposium, 33-44, 2009 | 289 | 2009 |
| Analytic modeling of the bias temperature instability using capture/emission time maps T Grasser, PJ Wagner, H Reisinger, T Aichinger, G Pobegen, M Nelhiebel, ... 2011 International Electron Devices Meeting, 27.4. 1-27.4. 4, 2011 | 217 | 2011 |
| Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 144 | 2009 |
| Theory of orientation-sensitive near-edge fine-structure core-level spectroscopy M Nelhiebel, PH Louf, P Schattschneider, P Blaha, K Schwarz, B Jouffrey Physical Review B 59 (20), 12807, 1999 | 143 | 1999 |
| Recent advances in understanding the bias temperature instability T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ... 2010 international electron devices meeting, 4.4. 1-4.4. 4, 2010 | 132 | 2010 |
| The ‘permanent’component of NBTI: Composition and annealing T Grasser, T Aichinger, G Pobegen, H Reisinger, PJ Wagner, J Franco, ... 2011 International Reliability Physics Symposium, 6A. 2.1-6A. 2.9, 2011 | 105 | 2011 |
| Density matrix of inelastically scattered fast electrons P Schattschneider, M Nelhiebel, B Jouffrey Physical Review B 59 (16), 10959, 1999 | 92 | 1999 |
| The orientation-dependent simulation of ELNES C Hébert-Souche, PH Louf, P Blaha, M Nelhiebel, J Luitz, ... Ultramicroscopy 83 (1-2), 9-16, 2000 | 88 | 2000 |
| Orientation sensitive EELS-analysis of boron nitride nanometric hollow spheres C Souche, B Jouffrey, G Hug, M Nelhiebel Micron 29 (6), 419-424, 1998 | 77 | 1998 |
| Understanding negative bias temperature instability in the context of hole trapping T Grasser, B Kaczer, W Gös, T Aichinger, P Hehenberger, M Nelhiebel Microelectronic Engineering 86 (7-9), 1876-1882, 2009 | 73 | 2009 |
| The physical significance of the mixed dynamic form factor P Schattschneider, M Nelhiebel, H Souchay, B Jouffrey Micron 31 (4), 333-345, 2000 | 73 | 2000 |
| Unambiguous identification of the NBTI recovery mechanism using ultra-fast temperature changes T Aichinger, M Nelhiebel, T Grasser 2009 IEEE International Reliability Physics Symposium, 2-7, 2009 | 66 | 2009 |
| On the temperature dependence of NBTI recovery T Aichinger, M Nelhiebel, T Grasser Microelectronics Reliability 48 (8-9), 1178-1184, 2008 | 58 | 2008 |
| Observation of normally distributed energies for interface trap recovery after hot-carrier degradation G Pobegen, S Tyaginov, M Nelhiebel, T Grasser IEEE electron device letters 34 (8), 939-941, 2013 | 55 | 2013 |
| A reliable technology concept for active power cycling to extreme temperatures M Nelhiebel, R Illing, C Schreiber, S Wöhlert, S Lanzerstorfer, M Ladurner, ... Microelectronics Reliability 51 (9-11), 1927-1932, 2011 | 51 | 2011 |
| High temperature storage reliability investigation of the Al–Cu wire bond interface R Pelzer, M Nelhiebel, R Zink, S Wöhlert, A Lassnig, G Khatibi Microelectronics Reliability 52 (9-10), 1966-1970, 2012 | 47 | 2012 |
| In Situ Poly Heater—A Reliable Tool for Performing Fast and Defined Temperature Switches on Chip T Aichinger, M Nelhiebel, S Einspieler, T Grasser IEEE Transactions on Device and Materials Reliability 10 (1), 3-8, 2009 | 46 | 2009 |
| Understanding temperature acceleration for NBTI G Pobegen, T Aichinger, M Nelhiebel, T Grasser 2011 International Electron Devices Meeting, 27.3. 1-27.3. 4, 2011 | 45 | 2011 |
| Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique P Hehenberger, T Aichinger, T Grasser, W Gos, O Triebl, B Kaczer, ... 2009 IEEE International Reliability Physics Symposium, 1033-1038, 2009 | 43 | 2009 |
