| Scalable modeling of transient self-heating of GaN high-electron-mobility transistors based on experimental measurements A Cutivet, G Pavlidis, B Hassan, M Bouchilaoun, C Rodriguez, A Soltani, ... IEEE Transactions on Electron Devices 66 (5), 2139-2145, 2019 | 13 | 2019 |
| Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance B Hassan, A Cutivet, M Bouchilaoun, C Rodriguez, A Soltani, F Boone, ... physica status solidi (a), 1800505, 2018 | 8 | 2018 |
| Thermal transient extraction for GaN HEMTs by frequency‐resolved gate resistance thermometry with sub‐100 ns time resolution A Cutivet, M Bouchilaoun, B Hassan, C Rodriguez, A Soltani, F Boone, ... physica status solidi (a) 216 (1), 1800503, 2019 | 7 | 2019 |
| Scalable small-signal modeling of AlGaN/GaN HEMT based on distributed gate resistance B Hassan, A Cutivet, C Rodriguez, F Cozette, A Soltani, H Maher, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 4 | 2019 |
| New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor F Cozette, B Hassan, C Rodriguez, E Frayssinet, R Comyn, F Lecourt, ... Semiconductor Science and Technology 36 (3), 034002, 2021 | 2 | 2021 |
| Distributed and scalable GaN HEMT modeling B Hassan Université de Sherbrooke, 2020 | | 2020 |
| Scaling of GaN HEMTs Thermal Transient Characteristics A Cutivet, M Bouchilaoun, B Hassan, C Rodriguez, A Soltani, F Boone, ... The compound semiconductor week (CSW), 2018 | | 2018 |
