Jianlu Wang
Jianlu Wang
Shanghai Institute of Technical Physics, Chinese Academy of Sciences
在 mail.sitp.ac.cn 的电子邮件经过验证
标题
引用次数
引用次数
年份
Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics
X Wang, P Wang, J Wang, W Hu, X Zhou, N Guo, H Huang, S Sun, ...
Advanced materials 27 (42), 6575-6581, 2015
4912015
Recent progress on localized field enhanced twodimensional material photodetectors from ultraviolet—visible to infrared
J Wang, H Fang, X Wang, X Chen, W Lu, W Hu
Small 13 (35), 1700894, 2017
1652017
Arrayed Van Der Waals Broadband Detectors for DualBand Detection
P Wang, S Liu, W Luo, H Fang, F Gong, N Guo, ZG Chen, J Zou, Y Huang, ...
Advanced Materials 29 (16), 1604439, 2017
1402017
Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect
H Huang, J Wang, W Hu, L Liao, P Wang, X Wang, F Gong, Y Chen, G Wu, ...
Nanotechnology 27 (44), 445201, 2016
1172016
Huge electrocaloric effect in Langmuir–Blodgett ferroelectric polymer thin films
PF Liu, JL Wang, XJ Meng, J Yang, B Dkhil, JH Chu
New Journal of Physics 12 (2), 023035, 2010
1092010
HighPerformance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure
Y Chen, X Wang, G Wu, Z Wang, H Fang, T Lin, S Sun, H Shen, W Hu, ...
Small 14 (9), 1703293, 2018
1002018
HighSensitivity FloatingGate Phototransistors Based on WS2 and MoS2
F Gong, W Luo, J Wang, P Wang, H Fang, D Zheng, N Guo, J Wang, ...
Advanced Functional Materials 26 (33), 6084-6090, 2016
962016
When nanowires meet ultrahigh ferroelectric field–high-performance full-depleted nanowire photodetectors
D Zheng, J Wang, W Hu, L Liao, H Fang, N Guo, P Wang, F Gong, ...
Nano letters 16 (4), 2548-2555, 2016
902016
Tunnel electroresistance through organic ferroelectrics
BB Tian, JL Wang, S Fusil, Y Liu, XL Zhao, S Sun, H Shen, T Lin, JL Sun, ...
Nature communications 7 (1), 1-6, 2016
752016
Highperformance ferroelectric polymer sidegated CdS nanowire ultraviolet photodetectors
D Zheng, H Fang, P Wang, W Luo, F Gong, JC Ho, X Chen, W Lu, L Liao, ...
Advanced Functional Materials 26 (42), 7690-7696, 2016
722016
Perpendicular optical reversal of the linear dichroism and polarized photodetection in 2D GeAs
Z Zhou, M Long, L Pan, X Wang, M Zhong, M Blei, J Wang, J Fang, ...
ACS nano 12 (12), 12416-12423, 2018
622018
Ferroelectric Localized Field–Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current
P Wang, Y Wang, L Ye, M Wu, R Xie, X Wang, X Chen, Z Fan, J Wang, ...
Small 14 (22), 1800492, 2018
592018
Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels
X Wang, C Liu, Y Chen, G Wu, X Yan, H Huang, P Wang, B Tian, Z Hong, ...
2D Materials 4 (2), 025036, 2017
542017
AsP/InSe van der Waals tunneling heterojunctions with ultrahigh reverse rectification ratio and high photosensitivity
F Wu, H Xia, H Sun, J Zhang, F Gong, Z Wang, L Chen, P Wang, M Long, ...
Advanced Functional Materials 29 (12), 1900314, 2019
502019
Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer
Y Chen, X Wang, P Wang, H Huang, G Wu, B Tian, Z Hong, Y Wang, ...
ACS applied materials & interfaces 8 (47), 32083-32088, 2016
502016
Transition of the polarization switching from extrinsic to intrinsic in the ultrathin polyvinylidene fluoride homopolymer films
JL Wang, BL Liu, XL Zhao, BB Tian, YH Zou, S Sun, H Shen, JL Sun, ...
Applied Physics Letters 104 (18), 182907, 2014
492014
Highly sensitive phototransistor based on GaSe nanosheets
H Huang, P Wang, Y Gao, X Wang, T Lin, J Wang, L Liao, J Sun, X Meng, ...
Applied Physics Letters 107 (14), 143112, 2015
482015
Integration of Highk Oxide on MoS2 by Using Ozone Pretreatment for HighPerformance MoS2 TopGated Transistor with ThicknessDependent Carrier …
J Wang, S Li, X Zou, J Ho, L Liao, X Xiao, C Jiang, W Hu, J Wang, J Li
Small 11 (44), 5932-5938, 2015
452015
Controlled Doping of WaferScale PtSe2 Films for Device Application
H Xu, H Zhang, Y Liu, S Zhang, Y Sun, Z Guo, Y Sheng, X Wang, C Luo, ...
Advanced Functional Materials 29 (4), 1805614, 2019
442019
A robust artificial synapse based on organic ferroelectric polymer
B Tian, L Liu, M Yan, J Wang, Q Zhao, N Zhong, P Xiang, L Sun, H Peng, ...
Advanced Electronic Materials 5 (1), 1800600, 2019
442019
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