| Continuum level-set model for anisotropic wet etching of patterned sapphire substrates A Toifl, F Rodrigues, LF Aguinsky, A Hössinger, J Weinbub Semiconductor Science and Technology 36 (4), 045016, 2021 | 9 | 2021 |
| Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching F Rodrigues, LF Aguinsky, A Toifl, A Scharinger, A Hössinger, J Weinbub 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | 5 | 2021 |
| Fabrication and characterization of a pH sensor F Rodrigues, HI Boudinov 2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2017 | 5 | 2017 |
| Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon LF Aguinsky, F Rodrigues, G Wachter, M Trupke, U Schmid, A Hössinger, ... Solid-State Electronics 191, 108262, 2022 | 4 | 2022 |
| Modeling incomplete conformality during atomic layer deposition in high aspect ratio structures LF Aguinsky, F Rodrigues, T Reiter, X Klemenschits, L Filipovic, ... Solid-State Electronics 201, 108584, 2023 | 3 | 2023 |
| Modeling and analysis of sulfur hexafluoride plasma etching for silicon microcavity resonators LF Aguinsky, G Wachter, P Manstetten, F Rodrigues, M Trupke, U Schmid, ... Journal of Micromechanics and Microengineering 31 (12), 125003, 2021 | 3 | 2021 |
| Anomalous Current–Voltage Behavior in Al/TiO2/n‐Si Structures RAZ Razera, HI Boudinov, FSB Rodrigues, RZ Ferreira, AF Feil physica status solidi (RRL)–Rapid Research Letters 12 (6), 1800057, 2018 | 3 | 2018 |
| Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations C Lenz, A Toifl, M Quell, F Rodrigues, A Hössinger, J Weinbub Solid-State Electronics 191, 108258, 2022 | 2 | 2022 |
| MEIS, TEM and GISAXS investigation of buried Pb nanoislands in SiO2/Si interface DF Sanchez, F Rodrigues, FP Luce, ZE Fabrim, GM Azevedo, ... Applied surface science 321, 80-85, 2014 | 2 | 2014 |
| Modeling Non-Ideal Conformality during Atomic Layer Deposition in High Aspect Ratio Structures LF Aguinsky, F Rodrigues, T Reiter, X Klemenschits, L Filipovic, ... arXiv preprint arXiv:2210.00749, 2022 | 1 | 2022 |
| Feature-Scale Modeling of Low-Bias SF6 Plasma Etching of Si LF Aguinsky, G Wachter, F Rodrigues, A Scharinger, A Toifl, M Trupke, ... 2021 Joint International EUROSOI Workshop and International Conference on …, 2021 | 1 | 2021 |
| Feature Scale Modeling of Fluorocarbon Plasma Etching for Via Structures including Faceting Phenomena F Rodrigues, LF Aguinsky, A Toifl, A Hössinger, J Weinbub Book of Abstracts of the International Workshop on Computational …, 2021 | 1 | 2021 |
| Modeling the impact of incomplete conformality during atomic layer processing T Reiter, LF Aguinsky, F Rodrigues, J Weinbub, A Hössinger, L Filipovic Solid-State Electronics 211, 108816, 2024 | | 2024 |
| 3D modeling of feature-scale fluorocarbon plasma etching in silica F Rodrigues, L Felipe Aguinsky, C Lenz, A Hössinger, J Weinbub Journal of Computational Electronics 22 (5), 1558-1563, 2023 | | 2023 |
| A Modern Formulation of Knudsen Diffusion with Applications to Nanofabrication LF Aguinsky, A Toifl, F Rodrigues, A Hössinger, J Weinbub 2023 IEEE 23rd International Conference on Nanotechnology (NANO), 270-275, 2023 | | 2023 |
| Automatic grid refinement for thin material layer etching in process TCAD simulations C Lenz, P Manstetten, LF Aguinsky, F Rodrigues, A Hössinger, J Weinbub Solid-State Electronics 200, 108534, 2023 | | 2023 |
| 3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching F Rodrigues, LF Aguinsky, A Hössinger, J Weinbub SISPAD 2022: International Conference on Simulation of Semiconductor …, 2022 | | 2022 |
| Fabrication of ion sensitive field effect transistors FSB Rodrigues | | 2018 |
| Photo and electroluminescence from SiNx layers deposited by reactive sputtering G Sombrio, F Rodrigues, PL Franzen, PA Soave, HI Boudinov 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2015 | | 2015 |
| Fabricação e caracterização de dispositivos eletroluminescentes de nitreto de silício depositado por sputtering reativo FSB Rodrigues | | 2015 |
Josef WeinbubSilvaco IncVerified email at silvaco.com
