| Effect of nitridation surface treatment on silicon (1 1 1) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD MNA Rahman, Y Yusuf, M Mansor, A Shuhaimi Applied Surface Science 362, 572-576, 2016 | 26 | 2016 |
| Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD MN Abd Rahman, NA Talik, MIMA Khudus, AF Sulaiman, K Allif, NM Zahir, ... CrystEngComm 21 (12), 2009-2017, 2019 | 23 | 2019 |
| Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD MN Abd Rahman, A Shuhaimi, Y Yusuf, H Li, AF Sulaiman, ... Superlattices and microstructures 120, 319-326, 2018 | 14 | 2018 |
| Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD MN Abd Rahman, Y Yusuf, A Anuar, MR Mahat, N Chanlek, NA Talik, ... CrystEngComm 22 (19), 3309-3321, 2020 | 10 | 2020 |
| Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition MN Abd Rahman, AF Sulaiman, MIMA Khudus, K Allif, NA Talik, SH Basri, ... Japanese Journal of Applied Physics 58 (SC), SC1037, 2019 | 10 | 2019 |
| Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD MN Abd Rahman, A Shuhaimi, MIM Abdul Khudus, A Anuar, MZ Zainorin, ... Journal of Electronic Materials 50, 2313-2322, 2021 | 6 | 2021 |
| Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes SA Abdul Rais, Z Hassan, AS Abu Bakar, MN Abd Rahman, Y Yusuf, ... Optical Materials Express 11 (3), 926-935, 2021 | 6 | 2021 |
| The effect of multi quantum well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance HN Hussin, NA Talik, MN Abd Rahman, MR Mahat, P Poopalan, ... Materials Science in Semiconductor Processing 121, 105431, 2021 | 6 | 2021 |
| Fabrication of deep green light emitting diode on bulk gallium nitride substrate SA bin Abdul Rais, Z Hassan, AS bin Abu Bakar, MN bin Abdul Rahman, ... Journal of Physics: Conference Series 1535 (1), 012016, 2020 | 3 | 2020 |
| The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition MN Abd Rahman, A Shuhaimi, OC Seng, G Tan, A Anuar, NA Talik, ... Journal of Materials Science: Materials in Electronics 32, 3211-3221, 2021 | 2 | 2021 |
| Electronic surface, optical and electrical properties of p–GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED MR Mahat, NA Talik, MN Abd Rahman, MA Anuar, K Allif, A Azman, ... Materials Science in Semiconductor Processing 106, 104757, 2020 | 2 | 2020 |
| Effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method AZ Arsad, NA Arzaee, SF Abdullah, MNA Rahman, MFM Noh, ... Ceramics International 50 (11), 18697-18707, 2024 | 1 | 2024 |
| Systematic optimization of sol–gel processed Al-doped ZnO for cost-effective transparent conductive oxide NA Arzaee, FI Za’abar, MS Bahrudin, AZ Arsad, NI Azman, ... Journal of Sol-Gel Science and Technology 110 (1), 52-61, 2024 | 1 | 2024 |
| Effect of deposition regime transition on the properties of Al: ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system MN Abd Rahman, AWM Zuhdi, UAU Amirulddin, M Isah, NI Azman, ... Ceramics International, 2024 | | 2024 |
| Zinc sulfide thin films deposited by chemical bath: Tuning consideration of structural, optical band gap, and electrical properties for CIGS solar cells application AZ Arsad, MS Bahrudin, NA Arzaee, MN Abd Rahman, CF Chau, ... Ceramics International 50 (7), 11776-11786, 2024 | | 2024 |
| Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS M Isah, C Doroody, KS Rahman, MNA Rahman, AA Goje, MEM Soudagar, ... Scientific Reports 14 (1), 4804, 2024 | | 2024 |
| Atomic structure for AlN grown on different plane orientation of sapphire via numerical study M Mansor, Y Yusuf, MN Abdul Rahman Microelectronics International 40 (1), 46-52, 2023 | | 2023 |
| High quality single-crystalline aluminum nitride grown using pulsed atomic-layer Epitaxy technique by MOCVD on sapphire substrate/Mohd Nazri Abd Rahman AR Mohd Nazri Universiti Malaya, 2021 | | 2021 |
| Effects of Pulse Cycle Number on the Quality of PALE AlN Films Grown via MOCVD MN Abd Rahman, AF Sulaiman, MIMA Khudus, K Allif, NA Talik, SH Basri, ... | | |
Abd. Majid Wan HalizaProfessor of Physics, University of MalayaVerified email at um.edu.my
