| High Sensitivity Spin Defects in hBN Created by High‐Energy He Beam Irradiation H Liang, Y Chen, C Yang, K Watanabe, T Taniguchi, G Eda, AA Bettiol Advanced Optical Materials 11 (1), 2201941, 2023 | 11 | 2023 |
| Optically Active Chalcogen Vacancies in Monolayer Semiconductors Z Zhang, H Liang, L Loh, Y Chen, Y Chen, K Watanabe, T Taniguchi, ... Advanced Optical Materials 10 (23), 2201350, 2022 | 7 | 2022 |
| Gate-Tunable Bound Exciton Manifolds in Monolayer MoSe2 Y Chen, H Liang, L Loh, Y Ho, I Verzhbitskiy, K Watanabe, T Taniguchi, ... Nano Letters 23 (10), 4456-4463, 2023 | 5 | 2023 |
| Single Atomic Defect Conductivity for Selective Dilute Impurity Imaging in 2D Semiconductors NTT Vu, L Loh, Y Chen, Q Wu, IA Verzhbitskiy, K Watanabe, T Taniguchi, ... ACS nano 17 (16), 15648-15655, 2023 | 1 | 2023 |
