关注
Timothy D. Sands
Timothy D. Sands
President, Virginia Tech; Professor of Materials Engineering & ECE, Purdue University; UC Berkeley
在 vt.edu 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Nanowires, nanostructures and devices fabricated therefrom
A Majumdar, A Shakouri, TD Sands, P Yang, SS Mao, RE Russo, H Feick, ...
US Patent 6,882,051, 2005
959*2005
Separation of thin films from transparent substrates by selective optical processing
NW Cheung, TD Sands, WS Wong
US Patent 6,071,795, 2000
8042000
Titanium nitride as a plasmonic material for visible and near-infrared wavelengths
GV Naik, JL Schroeder, X Ni, AV Kildishev, TD Sands, A Boltasseva
Optical Materials Express 2 (4), 478-489, 2012
7262012
Damage-free separation of GaN thin films from sapphire substrates
WS Wong, T Sands, NW Cheung
Applied Physics Letters 72 (5), 599-601, 1998
5331998
Equilibrium limits of coherency in strained nanowire heterostructures
E Ertekin, PA Greaney, DC Chrzan, TD Sands
Journal of Applied Physics 97 (11), 2005
4992005
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied physics letters 75 (10), 1360-1362, 1999
4681999
Nanoscale design to enable the revolution in renewable energy
J Baxter, Z Bian, G Chen, D Danielson, MS Dresselhaus, AG Fedorov, ...
Energy & Environmental Science 2 (6), 559-588, 2009
4452009
Fatigue and retention in ferroelectric YBaCuO/PbZrTiO/YBaCuO heterostructures
R Ramesh, WK Chan, B Wilkens, H Gilchrist, T Sands, JM Tarascon, ...
Applied Physics Letters 61 (13), 1537-1539, 1992
4411992
Fabrication of highdensity, high aspect ratio, largearea bismuth telluride nanowire arrays by electrodeposition into porous anodic alumina templates
MS Sander, AL Prieto, R Gronsky, T Sands, AM Stacy
Advanced Materials 14 (9), 665-667, 2002
4212002
Electrodeposition of Ordered Bi2Te3 Nanowire Arrays
AL Prieto, MS Sander, MS Martin-Gonzalez, R Gronsky, T Sands, ...
Journal of the American Chemical Society 123 (29), 7160-7161, 2001
4202001
Ferroelectric LaSrCoO/PbZrTiO/LaSrCoO heterostructures on silicon via template growth
R Ramesh, H Gilchrist, T Sands, VG Keramidas, R Haakenaasen, ...
Applied Physics Letters 63 (26), 3592-3594, 1993
4171993
Separation of thin films from transparent substrates by selective optical processing
NW Cheung, TD Sands, WS Wong
US Patent 6,420,242, 2002
3252002
Insights into the electrodeposition of Bi2Te3
MS Martın-González, AL Prieto, R Gronsky, T Sands, AM Stacy
Journal of The Electrochemical Society 149 (11), C546, 2002
3152002
Epitaxial growth of ferromagnetic ultrathin MnGa films with perpendicular magnetization on GaAs
M Tanaka, JP Harbison, J DeBoeck, T Sands, B Philips, TL Cheeks, ...
Applied physics letters 62 (13), 1565-1567, 1993
2671993
Enhancement of (In, Ga) N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon
ZS Luo, Y Cho, V Loryuenyong, T Sands, NW Cheung, MC Yoo
IEEE Photonics Technology Letters 14 (10), 1400-1402, 2002
2622002
light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ...
Applied Physics Letters 77 (18), 2822-2824, 2000
2552000
Epitaxial superlattices with titanium nitride as a plasmonic component for optical hyperbolic metamaterials
GV Naik, B Saha, J Liu, SM Saber, EA Stach, JMK Irudayaraj, TD Sands, ...
Proceedings of the National Academy of Sciences 111 (21), 7546-7551, 2014
2442014
Structure of bismuth telluride nanowire arrays fabricated by electrodeposition into porous anodic alumina templates
MS Sander, R Gronsky, T Sands, AM Stacy
Chemistry of Materials 15 (1), 335-339, 2003
2272003
Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
NW Cheung, TD Sands, WS Wong
US Patent 6,335,263, 2002
2272002
Direct Electrodeposition of Highly Dense 50 nm Bi2Te3-ySey Nanowire Arrays
M Martín-González, GJ Snyder, AL Prieto, R Gronsky, T Sands, AM Stacy
Nano Letters 3 (7), 973-977, 2003
2032003
系统目前无法执行此操作,请稍后再试。
文章 1–20