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Jaeseoung Park
Jaeseoung Park
Verified email at etri.re.kr
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Cited by
Year
Directing Oxygen Vacancy Channels in SrFeO2.5 Epitaxial Thin Films
A Khare, J Lee, J Park, GY Kim, SY Choi, T Katase, S Roh, TS Yoo, ...
ACS applied materials & interfaces 10 (5), 4831-4837, 2018
462018
High-throughput roll-to-roll fabrication of flexible thermochromic coatings for smart windows with VO 2 nanoparticles
Y Kim, S Yu, J Park, D Yoon, AM Dayaghi, KJ Kim, JS Ahn, J Son
Journal of Materials Chemistry C 6 (13), 3451-3458, 2018
362018
Accelerated Hydrogen Diffusion and Surface Exchange by Domain Boundaries in Epitaxial VO2 Thin Films
J Park, H Yoon, H Sim, SY Choi, J Son
ACS nano 14 (2), 2533-2541, 2020
262020
Deep Proton Insertion Assisted by Oxygen Vacancies for Long‐Term Memory in VO2 Synaptic Transistor
C Oh, I Kim, J Park, Y Park, M Choi, J Son
Advanced Electronic Materials 7 (2), 2000802, 2021
232021
Facet‐Dependent Phase Control by Band Filling and Anisotropic Electron–Lattice Coupling in HVO2 Epitaxial Films
H Yoon, J Park, SY Choi, D Lee, J Son
Advanced Electronic Materials 4 (8), 1800128, 2018
162018
Anisotropic ionic transport-controlled synaptic weight update by protonation in a VO 2 transistor
J Park, C Oh, J Son
Journal of Materials Chemistry C 9 (7), 2521-2529, 2021
152021
Nanoscaffold WO3 by Kinetically Controlled Polymorphism
J Park, H Yoon, SY Choi, J Son
Crystal Growth & Design 19 (1), 479-486, 2018
82018
Spatial Interactions in Hydrogenated Perovskite Nickelate Synaptic Networks
RS Bisht, J Park, H Yu, C Wu, N Tilak, S Rangan, TJ Park, Y Yuan, S Das, ...
Nano Letters 23 (15), 7166-7173, 2023
42023
Self-assembly of correlated (Ti, V)O2 superlattices with tunable lamella periods by kinetically enhanced spinodal decomposition
J Park, GY Kim, K Song, SY Choi, J Son
NPG Asia Materials 11 (1), 32, 2019
42019
Integration of Ag-CBRAM crossbars and Mott ReLU neurons for efficient implementation of deep neural networks in hardware
Y Shi, S Oh, J Park, J del Valle, P Salev, IK Schuller, D Kuzum
Neuromorphic Computing and Engineering 3 (3), 034007, 2023
22023
Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge
J Park, A Kumar, Y Zhou, S Oh, JH Kim, Y Shi, S Jain, G Hota, E Qiu, ...
Nature Communications 15 (1), 3492, 2024
12024
Energy Efficient Implementation of MVM Operations Using Filament-Free Bulk RRAM Array
A Kumar, J Park, Y Zhou, J Kim, S Jain, CD Schuman, G Cauwenberghs, ...
2024 Neuro Inspired Computational Elements Conference (NICE), 1-5, 2024
2024
Multi-level, Forming Free, Bulk Switching Trilayer RRAM for Neuromorphic Computing at the Edge
J Park, A Kumar, Y Zhou, S Oh, JH Kim, Y Shi, S Jain, G Hota, AL Nagle, ...
arXiv preprint arXiv:2310.13844, 2023
2023
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