| Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors MGC de Andrade, LF de Oliveira Bergamim, BB Júnior, CR Nogueira, ... Solid-State Electronics 183, 108050, 2021 | 6 | 2021 |
| Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation MGC de Andrade, CR Nogueira, NG Júnior, RT Doria, R Trevisoli, ... Solid-State Electronics 211, 108807, 2024 | | 2024 |
| Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers BB Junior, MGC De Andrade, LF de Oliveira Bergamim, CR Nogueira, ... 2022 IEEE Latin American Electron Devices Conference (LAEDC), 1-4, 2022 | | 2022 |
| Temperature Dependence of AlGaN/GaN High Electron Mobility Transistors on 200 mm Si wafers B Baptista Junior, MG Cano de Andrade, LF de Oliveira Bergamim, ... IEEE, 2022 | | 2022 |
