| Junction temperature measurement method for power MOSFETs using turn-on delay of impulse signal B Shi, S Feng, L Shi, D Shi, Y Zhang, H Zhu IEEE Transactions on Power Electronics 33 (6), 5274-5282, 2017 | 40 | 2017 |
| Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs GZ Yamin Zhang, Shiwei Feng, Hui Zhu, Chunsheng Guo, Bing Deng IEEE Electron Device Letters 35 (3), 345-347, 2014 | 39 | 2014 |
| A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient XH X Zheng, S Feng, Y Zhang IEEE Transactions on Electron Devices 64 (4), 1498-1504, 2017 | 32 | 2017 |
| Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs Y Zhang, S Feng, H Zhu, J Zhang, B Deng Microelectronics Reliability 53 (5), 694-700, 2013 | 31 | 2013 |
| Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy X Zheng, S Feng, Y Zhang, J Yang Microelectronics Reliability 63, 46-51, 2016 | 28 | 2016 |
| Junction temperature measurement method for SiC bipolar junction transistor using base–collector voltage drop at low current B Shi, S Feng, Y Zhang, K Bai, Y Xiao, L Shi, H Zhu, C Guo IEEE Transactions on Power Electronics 34 (10), 10136-10142, 2019 | 25 | 2019 |
| Thermal investigation of LED array with multiple packages based on the superposition method D Shi, S Feng, Y Zhang, Y Qiao, B Deng Microelectronics journal 46 (7), 632-636, 2015 | 25 | 2015 |
| Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs H Zhu, X Meng, X Zheng, Y Yang, S Feng, Y Zhang, C Guo Solid-State Electronics 145, 40-45, 2018 | 18 | 2018 |
| The effect of external stress on the electrical characteristics of AlGaN/GaN HEMTs CG K Liu, H Zhu, S Feng, L Shi, Y Zhang Microelectronics Reliability 55 (6), 886-889, 2015 | 18 | 2015 |
| A drain–source connection technique: Thermal resistance measurement method for GaN HEMTs using TSEP at high voltage X Li, S Feng, C Liu, Y Zhang, K Bai, Y Xiao, X Zheng, X He, S Pan, G Lin, ... IEEE Transactions on Electron Devices 67 (12), 5454-5459, 2020 | 17 | 2020 |
| Determining drain current characteristics and channel temperature rise in GaN HEMTs Y Zhang, S Feng, H Zhu, X Gong, L Shi, C Guo IEEE Transactions on Device and Materials Reliability 14 (4), 978-982, 2014 | 14 | 2014 |
| Effect of uniaxial tensile strains at different orientations on the characteristics of AlGaN/GaN high-electron-mobility transistors C Wang, H Zhu, S Wang, D Chu, K Liu, L Jin, R Li, J Liu, S Feng, C Guo, ... IEEE Transactions on Electron Devices 67 (2), 449-454, 2020 | 12 | 2020 |
| A voltage-transient method for characterizing traps in GaN HEMTs X Zheng, S Feng, Y Gao, Y Zhang, Y Jia, S Pan Microelectronics Reliability 93, 57-60, 2019 | 11 | 2019 |
| Monitoring of early catastrophic optical damage in laser diodes based on facet reflectivity measurement et al Zhang S Y, Feng S W, Zhang Y M Applied Physics Letters 110 (22), 223503, 2017 | 10 | 2017 |
| Evaluation of the drain—source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method L Ma, S Feng, Y Zhang, B Deng, Y Yue Journal of Semiconductors 35 (9), 094006, 2014 | 10 | 2014 |
| Identifying the properties of traps in GaN high-electron-mobility transistors via amplitude analysis based on the voltage-transient method S Pan, S Feng, X Li, X Zheng, X Lu, X He, K Bai, Y Zhang, L Zhou IEEE Transactions on Electron Devices 68 (11), 5541-5546, 2021 | 9 | 2021 |
| Evidence of GaN HEMT Schottky gate degradation after gamma irradiation X Zheng, S Feng, C Peng, G Lin, L Bai, X Li, Y Yang, S Pan, Z Hu, X Li, ... IEEE Transactions on Electron Devices 66 (9), 3784-3788, 2019 | 9 | 2019 |
| Variation of dominant degradation mechanism in AlGaN barrier layer with different voltage stress on the gate of AlGaN/GaN high electron mobility transistors L Shi, S Feng, Y Zhang, B Shi, K Liu IEEE Electron Device Letters 36 (4), 321-323, 2015 | 9 | 2015 |
| Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements Y Zhang, S Feng, H Zhu, G Zhang, B Deng, L Ma Journal of Applied Physics 114 (9), 2013 | 9 | 2013 |
| Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method S Pan, S Feng, X Li, K Bai, X Lu, Y Li, Y Zhang, L Zhou, M Zhang Applied Physics Letters 121 (15), 2022 | 8 | 2022 |
