| Scaleable single-photon avalanche diode structures in nanometer CMOS technology JA Richardson, EAG Webster, LA Grant, RK Henderson IEEE Transactions on Electron Devices 58 (7), 2028-2035, 2011 | 159 | 2011 |
| Single photon avalanche diode for CMOS circuits EAG Webster, RK Henderson US Patent 9,178,100, 2015 | 132 | 2015 |
| A high-performance single-photon avalanche diode in 130-nm CMOS imaging technology EAG Webster, LA Grant, RK Henderson IEEE Electron Device Letters 33 (11), 1589-1591, 2012 | 125 | 2012 |
| A single-photon avalanche diode in 90-nm CMOS imaging technology with 44% photon detection efficiency at 690 nm EAG Webster, JA Richardson, LA Grant, D Renshaw, RK Henderson IEEE Electron Device Letters 33 (5), 694-696, 2012 | 117 | 2012 |
| Back side illuminated single photon avalanche diode imaging sensor with high short wavelength detection efficiency EAG Webster US Patent 9,331,116, 2016 | 70 | 2016 |
| Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications EAG Webster US Patent 9,312,401, 2016 | 69 | 2016 |
| Stacked chip SPAD image sensor EAG Webster, T Dai US Patent 9,299,732, 2016 | 63 | 2016 |
| Spad sensor circuit with biasing circuit EAG Webster, RK Henderson US Patent App. 14/150,346, 2014 | 61 | 2014 |
| Method of fabricating a single photon avalanche diode imaging sensor EAG Webster US Patent 9,209,320, 2015 | 57 | 2015 |
| Back side illuminated image sensor with guard ring region reflecting structure EAG Webster US Patent 9,685,576, 2017 | 53 | 2017 |
| Visible and infrared image sensor EAG Webster, HE Rhodes, D Massetti US Patent 9,806,122, 2017 | 45 | 2017 |
| Enhanced back side illuminated near infrared image sensor EAG Webster US Patent 9,825,073, 2017 | 43 | 2017 |
| A 3× 3, 5µm pitch, 3-transistor single photon avalanche diode array with integrated 11V bias generation in 90nm CMOS technology RK Henderson, EAG Webster, R Walker, JA Richardson, LA Grant 2010 International Electron Devices Meeting, 14.2. 1-14.2. 4, 2010 | 42 | 2010 |
| A 1280× 1080 4.2 µm split-diode pixel hdr sensor in 110 nm bsi cmos process T Willassen, J Solhusvik, R Johansson, S Yaghmai, H Rhodes, S Manabe, ... Proceedings of the International Image Sensor Workshop, Vaals, The …, 2015 | 37 | 2015 |
| Per-pixel dark current spectroscopy measurement and analysis in CMOS image sensors EAG Webster, RL Nicol, L Grant, D Renshaw IEEE Transactions on electron devices 57 (9), 2176-2182, 2010 | 29 | 2010 |
| Partitioned silicon photomultiplier with delay equalization EAG Webster US Patent 9,082,675, 2015 | 27 | 2015 |
| A TCAD and spectroscopy study of dark count mechanisms in single-photon avalanche diodes EAG Webster, RK Henderson IEEE transactions on electron devices 60 (12), 4014-4019, 2013 | 26 | 2013 |
| Single-photon avalanche diodes in 90 nm CMOS imaging technology with sub-1 Hz median dark count rate EAG Webster, JA Richardson, LA Grant, RK Henderson Proceedings of the International Image Sensor Workshop, 262-265, 2011 | 26 | 2011 |
| Transient single-photon avalanche diode operation, minority carrier effects, and bipolar latch up EAG Webster, LA Grant, RK Henderson IEEE transactions on electron devices 60 (3), 1188-1194, 2013 | 24 | 2013 |
| Horizontal avalanche photodiode G Chen, EAG Webster, D Mao, V Venezia, DH Tai US Patent 9,881,963, 2018 | 23 | 2018 |
