| 2-D numerical simulation of high performance amorphous In-Ga-Zn-O TFTs for flat panel displays T Fung, CS Chuang, C Chen, K Abe, H Kumomi, J Kanicki Am-FPd 8, 251-252, 2008 | 626 | 2008 |
| Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors TC Fung, CS Chuang, C Chen, K Abe, R Cottle, M Townsend, H Kumomi, ... Journal of Applied Physics 106 (8), 2009 | 285 | 2009 |
| Photofield‐effect in amorphous In‐Ga‐Zn‐O (a‐IGZO) thin‐film transistors TC Fung, CS Chuang, K Nomura, HPD Shieh, H Hosono, J Kanicki Journal of information display 9 (4), 21-29, 2008 | 117 | 2008 |
| Low-voltage organic thin-film transistors with polymeric nanocomposite dielectrics FC Chen, CS Chuang, YS Lin, LJ Kung, TH Chen, HPD Shieh Organic electronics 7 (5), 435-439, 2006 | 84 | 2006 |
| P‐13: Photosensitivity of Amorphous IGZO TFTs for Active‐Matrix Flat‐Panel Displays CS Chuang, TC Fung, BG Mullins, K Nomura, T Kamiya, HPD Shieh, ... SID Symposium Digest of Technical Papers 39 (1), 1215-1218, 2008 | 81 | 2008 |
| Termination structure for trench DMOS device and method of making the same HH Hsieh, CS Chuang, S Chang, MS Tseng US Patent 6,855,986, 2005 | 59 | 2005 |
| Controllable carrier density of pentacene field-effect transistors using polyacrylates as gate dielectrics JA Cheng, CS Chuang, MN Chang, YC Tsai, HPD Shieh Organic electronics 9 (6), 1069-1075, 2008 | 40 | 2008 |
| Termination structure of DMOS device CS Chuang, CP Chang, MS Tseng, HH Hsieh US Patent 7,087,958, 2006 | 40 | 2006 |
| Thin film transistor having highly dielectric organic layer CS Chuang, FC Chen, HPD Shieh US Patent 8,907,325, 2014 | 28 | 2014 |
| Organic thin-film transistors with reduced photosensitivity CS Chuang, FC Chen, HPD Shieh Organic electronics 8 (6), 767-772, 2007 | 15 | 2007 |
| Photocurrent suppression of transparent organic thin film transistors CS Chuang, ST Tsai, YS Lin, FC Chen, HPD Shieh Japanese Journal of Applied Physics 46 (12L), L1197, 2007 | 13 | 2007 |
| Gate dielectric structure and an organic thin film transistor based thereon FC Chen, CS Chuang, YS Lin US Patent App. 11/459,409, 2007 | 13 | 2007 |
| DMOS device having a trenched bus structure HH Hsieh, CS Chuang, CP Chang, MS Tseng US Patent 7,084,457, 2006 | 11 | 2006 |
| Method for forming dual oxide layers at bottom of trench CS Chuang, CP Chang, MS Tseng, CT Ni US Patent 6,821,913, 2004 | 9 | 2004 |
| Forward-voltage-tunable Schottky-integrated trench MOSFETs CSP Chuang, KYG Chen, YRR Hung, TC Kuo, CCT Huang 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 8 | 2014 |
| Termination structure for trench DMOS device and method of making the same HH Hsieh, CS Chuang, S Chang, MS Tseng US Patent 6,998,315, 2006 | 8 | 2006 |
| Trench MOS device with Schottky diode and method for manufacturing same CS Chuang US Patent 8,368,140, 2013 | 7 | 2013 |
| Trench schottky devices CS Chuang, KY Chen, CC Huang US Patent 8,912,621, 2014 | 6 | 2014 |
| Junction structure of organic semiconductor device, organic thin film transistor and fabricating method thereof FC Chen, CS Chuang US Patent App. 11/164,092, 2007 | 6 | 2007 |
| Termination structure of DMOS device and method of forming the same CS Chuang, HH Hsieh, MS Tseng, CP Chang US Patent 6,989,306, 2006 | 6 | 2006 |
