| Second-order optical response in semiconductors JE Sipe, AI Shkrebtii Physical Review B 61 (8), 5337, 2000 | 797 | 2000 |
| Reflectance anisotropy of GaAs (100): Theory and experiment AI Shkrebtii, N Esser, W Richter, WG Schmidt, F Bechstedt, BO Fimland, ... Physical review letters 81 (3), 721, 1998 | 125 | 1998 |
| Microscopic calculation of the optical properties of Si (100) 2× 1: Symmetric versus asymmetric dimers AI Shkrebtii, R Del Sole Physical review letters 70 (17), 2645, 1993 | 118 | 1993 |
| Ab initio study of structure and dynamics of the Si(100) surface AI Shkrebtii, R Di Felice, CM Bertoni, R Del Sole Physical Review B 51 (16), 11201, 1995 | 100 | 1995 |
| Quantum interference in electron-hole generation in noncentrosymmetric semiconductors JM Fraser, AI Shkrebtii, JE Sipe, HM Van Driel Physical review letters 83 (20), 4192, 1999 | 82 | 1999 |
| Correlation of InGaP (001) surface structure during growth and bulk ordering M Zorn, P Kurpas, AI Shkrebtii, B Junno, A Bhattacharya, K Knorr, ... Physical Review B 60 (11), 8185, 1999 | 82 | 1999 |
| Quantum interference control of currents in CdSe with a single optical beam N Laman, AI Shkrebtii, JE Sipe, HM Van Driel Applied Physics Letters 75 (17), 2581-2583, 1999 | 80 | 1999 |
| Theoretical and Experimental Optical Spectroscopy Study of Hydrogen Adsorption at Si(111)-( ) C Noguez, C Beitia, W Preyss, AI Shkrebtii, M Roy, Y Borensztein, ... Physical review letters 76 (26), 4923, 1996 | 74 | 1996 |
| Graphene and graphane functionalization with hydrogen: electronic and optical signatures AI Shkrebtii, E Heritage, P McNelles, JL Cabellos, BS Mendoza physica status solidi c 9 (6), 1378-1383, 2012 | 56 | 2012 |
| Sensitivity of reflectance anisotropy spectroscopy to the orientation of Ge dimers on vicinal Si (001) JR Power, P Weightman, S Bose, AI Shkrebtii, R Del Sole Physical review letters 80 (14), 3133, 1998 | 53 | 1998 |
| Atomic Structure of the Sb-Stabilized GaAs(100)-( ) Surface N Esser, AI Shkrebtii, U Resch-Esser, C Springer, W Richter, WG Schmidt, ... Physical review letters 77 (21), 4402, 1996 | 53 | 1996 |
| Structural and electronic properties of the (111) 2× 1 surface of Ge from first-principles calculations N Takeuchi, A Selloni, AI Shkrebtii, E Tosatti Physical Review B 44 (24), 13611, 1991 | 50 | 1991 |
| Surface vibrations at clean and hydrogenated GaAs (110) from ab-initio molecular dynamics R Di Felice, AI Shkrebtii, F Finocchi, CM Bertoni, G Onida Journal of electron spectroscopy and related phenomena 64, 697-706, 1993 | 46 | 1993 |
| Structural models of reconstructed Si (110) surface phases AI Shkrebtii, CM Bertoni, R Del Sole, BA Nesterenko Surface science 239 (3), 227-234, 1990 | 44 | 1990 |
| Reflectance anisotropy spectroscopy of ordered Sb overlayers on GaAs (110) and InP (110) N Esser, R Hunger, J Rumberg, W Richter, R Del Sole, AI Shkrebtii Surface science 307, 1045-1050, 1994 | 42 | 1994 |
| Temperature dependence of the optical response: Application to bulk GaAs using first-principles molecular dynamics simulations ZA Ibrahim, AI Shkrebtii, MJG Lee, K Vynck, T Teatro, W Richter, T Trepk, ... Physical Review B 77 (12), 125218, 2008 | 40 | 2008 |
| Surface reflectance anisotropy of C (100) and Si (100) ab initio calculations within the pseudopotential plane wave approach C Kress, A Shkrebtii, R Del Sole Surface science 377, 398-403, 1997 | 36 | 1997 |
| The silicon (110) surface: Possible structural models BA Nesterenko, AI Shkrebtii Surface Science 213 (2-3), 309-315, 1989 | 36 | 1989 |
| Ab initio calculation of the reflectance anisotropy of GaAs(110) O Pulci, G Onida, R Del Sole, AJ Shkrebtii Physical Review B 58 (4), 1922, 1998 | 34 | 1998 |
| Theory of optical reflectance anisotropy of the natural Si (110) surface BS Mendoza, R Del Sole, AI Shkrebtii Physical Review B 57 (20), R12709, 1998 | 34 | 1998 |
