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Dr. Navneet Bhardwaj
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Thermally Grown TiO2and Al2O3for GaN-Based MOS-HEMTs
A Rawat, M Meer, V kumar Surana, N Bhardwaj, V Pendem, ...
IEEE Transactions on Electron Devices 65 (9), 3725-3731, 2018
402018
Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs
YK Yadav, BB Upadhyay, M Meer, N Bhardwaj, S Ganguly, D Saha
IEEE Electron Device Letters 40 (1), 67-70, 2018
392018
Realization of high quality silicon nitride deposition at low temperatures
VK Surana, N Bhardwaj, A Rawat, Y Yadav, S Ganguly, D Saha
Journal of Applied Physics 126 (11), 2019
292019
Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a Dielectric
A Rawat, VK Surana, M Meer, N Bhardwaj, S Ganguly, D Saha
IEEE Transactions on Electron Devices 66 (6), 2557-2562, 2019
222019
Sensitized luminescence from water-soluble LaF 3: Eu nanocrystals via partially-capped 1, 10-phenanthroline: time-gated emission and multiple lifetimes
M Irfanullah, N Bhardwaj, A Chowdhury
Dalton Transactions 45 (31), 12483-12495, 2016
122016
Thermally grown Nb-oxide for GaN-based MOS-diodes
N Bhardwaj, BB Upadhyay, YK Yadav, S Surapaneni, S Ganguly, D Saha
Applied Surface Science 572, 151332, 2022
42022
Improvements from SiC Substrate thinning in AlGaN/GaN HEMTs: Disparate Effects on Contacts, Access and Channel Regions
DS Navneet Bhardwaj,Bazila Parvez, Jaya Jha, Pankaj Upadhyay, , Yogendra ...
IEEE Electron Device Letters, 2021
42021
Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb2O5 gate dielectric
N Bhardwaj, BB Upadhyay, B Parvez, P Pohekar, Y Yadav, A Sahu, ...
Physica Scripta 98 (1), 015805, 2022
32022
Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors
J Jha, BB Upadhyay, K Takhar, N Bhardwaj, S Ganguly, D Saha
Journal of Applied Physics 124 (16), 2018
32018
High‐Performance GaN HEMTs with I ON/I OFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric
BB Upadhyay, S Surapaneni, YK Yadav, N Bhardwaj, N Suvachintak, ...
physica status solidi (a) 219 (12), 2100839, 2022
22022
High Power Broad C-band Amplifier Using AlGan/GaN Based High Electron Mobility Transistors
J Jha, Y Yadav, B Upadhyay, S Surapaneni, N Bhardwaj, S Ganguly, ...
2021 8th International Conference on Electrical and Electronics Engineering …, 2021
12021
Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)
S Pudi, N Bhardwaj, R Sarkar, VS Bellamkonda, U Singh, A Jain, ...
arXiv preprint arXiv:2308.08515, 2023
2023
TTkk Sensitized luminescence from water-soluble
M Irfanullah, N Bhardwaj, A Chowdhury
Dalton Trans 45, 12485-12495, 2016
2016
High-Performance GaN HEMTs with I ON/I OFF≈ 1010 and Gate Leakage Current
BB UPADHYAY, S SURAPANENI, YK YADAV, N BHARDWAJ, ...
Aluminum alloys, 0
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