| Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe2/ReSe2 van der Waals Heterostructure J Ahn, K Ko, J Kyhm, HS Ra, H Bae, S Hong, DY Kim, J Jang, TW Kim, ... ACS nano 15 (11), 17917-17925, 2021 | 49 | 2021 |
| Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance SJ Yang, KT Park, J Im, S Hong, Y Lee, BW Min, K Kim, S Im Nature communications 11 (1), 1574, 2020 | 45 | 2020 |
| Ambipolar Channel p‐TMD/n‐Ga2O3 Junction Field Effect Transistors and High Speed Photo‐sensing in TMD Channel W Choi, J Ahn, KT Kim, HJ Jin, S Hong, DK Hwang, S Im Advanced Materials 33 (38), 2103079, 2021 | 38 | 2021 |
| 2D tmd channel transistors with zno nanowire gate for extended nonvolatile memory applications T Kim, D Kang, Y Lee, S Hong, HG Shin, H Bae, Y Yi, K Kim, S Im Advanced Functional Materials 30 (40), 2004140, 2020 | 31 | 2020 |
| Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions Y Jeong, HJ Lee, J Park, S Lee, HJ Jin, S Park, H Cho, S Hong, T Kim, ... npj 2D Materials and Applications 6 (1), 23, 2022 | 21 | 2022 |
| Dynamic oscillation via negative differential resistance in type III junction organic/two‐dimensional and oxide/two‐dimensional transition metal dichalcogenide diodes W Choi, S Hong, Y Jeong, Y Cho, HG Shin, JH Park, Y Yi, S Im Advanced Functional Materials 31 (9), 2009436, 2021 | 21 | 2021 |
| Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors H Cho, D Kang, Y Lee, H Bae, S Hong, Y Cho, K Kim, Y Yi, JH Park, S Im Nano letters 21 (8), 3503-3510, 2021 | 19 | 2021 |
| Low Voltage and Ferroelectric 2D Electron Devices Using Lead‐Free BaxSr1‐xTiO3 and MoS2 Channel Y Jeong, HJ Jin, JH Park, Y Cho, M Kim, S Hong, W Jo, Y Yi, S Im Advanced Functional Materials 30 (7), 1908210, 2020 | 16 | 2020 |
| Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2 S Hong, KL Kim, Y Cho, H Cho, JH Park, C Park, S Im Advanced Electronic Materials 6 (9), 2000479, 2020 | 13 | 2020 |
| Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P (VDF-TrFE) Y Cho, H Cho, S Hong, D Kang, Y Yi, C Park, JH Park, S Im Nano Energy 81, 105686, 2021 | 11 | 2021 |
| High-performance van der Waals junction field-effect transistors utilizing organic molecule/transition metal dichalcogenide interface HG Shin, D Kang, Y Jeong, K Kim, Y Cho, J Park, S Hong, Y Yi, S Im ACS nano 14 (11), 15646-15653, 2020 | 10 | 2020 |
| Van der Waals crystal radio with Pt/MoSe2 Schottky diode and h-BN capacitor for RF energy harvesting LJ Widiapradja, S Hong, KT Kim, H Bae, S Im Nano Energy 92, 106771, 2022 | 7 | 2022 |
| Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning S Hong, CU Hong, S Lee, M Jang, C Jang, Y Lee, LJ Widiapradja, S Park, ... Science advances 9 (29), eadh9770, 2023 | 2 | 2023 |
| Negative Photoresponse Switching via Electron–Hole Recombination at The Type III Junction of MoTe2 Channel/SnS2 Top Layer Y Jeong, T Kim, H Cho, J Ahn, S Hong, DK Hwang, S Im Advanced Materials 35 (48), 2304599, 2023 | 1 | 2023 |
| Anisotropic Electron Mobility and Contact Resistance of β-Ga2O3 Obtained via Radio Frequency Transmission Line Methods on Schottky Devices HJ Kim, S Hong, C Jang, HJ Jin, H Woo, H Bae, S Im ACS nano 18 (11), 8546-8554, 2024 | | 2024 |
| Maximizing Schottky barrier modulation in graphene-WSe2/MoSe2 heterojunction barristor through Dirac-cone induced phenomenon LJ Widiapradja, S Hong, Y Jeong, S Im Carbon, 118920, 2024 | | 2024 |
| Measuring the Bandgap of Ambipolar 2D Semiconductors using Multilayer Graphene Contact S Park, S Hong, JY Lim, S Yu, J Kim, H Cheong, S Im Small Science 3 (2), 2200075, 2023 | | 2023 |
| Correction to: Complementary Type Ferroelectric Memory Transistor Circuits with P-and N-Channel MoTe 2 (Advanced Electronic Materials,(2020), 6, 9,(2000479), 10.1002/aelm … S Hong, KL Kim, Y Cho, H Cho, JH Park, C Park, S Im Advanced Electronic Materials 7 (5), 2000906, 2021 | | 2021 |
| Bifunctional Complementary Type Ferroelectric Memory Circuit with both P-and N-channel MoTe2 S Hong | | |
