Jung Han
Jung Han
William Norton Professor of Electrical Engineering, Yale University
Verified email at yale.edu
TitleCited byYear
Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors
SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ...
Nature materials 5 (10), 810, 2006
674*2006
AlGaN/GaN quantum well ultraviolet light emitting diodes
J Han, MH Crawford, RJ Shul, JJ Figiel, M Banas, L Zhang, YK Song, ...
Applied physics letters 73 (12), 1688-1690, 1998
2891998
Graded band gap ohmic contact to p‐ZnSe
Y Fan, J Han, L He, J Saraie, RL Gunshor, M Hagerott, H Jeon, ...
Applied physics letters 61 (26), 3160-3162, 1992
2891992
Stress evolution during metalorganic chemical vapor deposition of GaN
S Hearne, E Chason, J Han, JA Floro, J Figiel, J Hunter, H Amano, ...
Applied physics letters 74 (3), 356-358, 1999
2671999
The band-gap bowing of alloys
SR Lee, AF Wright, MH Crawford, GA Petersen, J Han, RM Biefeld
Applied physics letters 74 (22), 3344-3346, 1999
2381999
Stress and defect control in GaN using low temperature interlayers
H Amano, M Iwaya, T Kashima, M Katsuragawa, I Akasaki, J Han, ...
Japanese journal of applied physics 37 (12B), L1540, 1998
2211998
Low-dislocation-density GaN from a single growth on a textured substrate
CIH Ashby, CC Mitchell, J Han, NA Missert, PP Provencio, DM Follstaedt, ...
Applied Physics Letters 77 (20), 3233-3235, 2000
2172000
Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors
B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
1982002
The effect of on morphology evolution during GaN metalorganic chemical vapor deposition
J Han, TB Ng, RM Biefeld, MH Crawford, DM Follstaedt
Applied physics letters 71 (21), 3114-3116, 1997
1931997
Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
KE Waldrip, J Han, JJ Figiel, H Zhou, E Makarona, AV Nurmikko
Applied Physics Letters 78 (21), 3205-3207, 2001
1862001
Continuous-wave, room temperature, ridge waveguide green-blue diode laser
A Salokatve, H Jeon, J Ding, M Hovinen, AV Nurmikko, DC Grillo, L He, ...
Electronics Letters 29 (25), 2192-2194, 1993
1831993
Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue‐green laser diode
GC Hua, N Otsuka, DC Grillo, Y Fan, J Han, MD Ringle, RL Gunshor, ...
Applied physics letters 65 (11), 1331-1333, 1994
1641994
Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy
C Theodoropoulos, TJ Mountziaris, HK Moffat, J Han
Journal of crystal growth 217 (1-2), 65-81, 2000
1482000
Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers
J Han, KE Waldrip, SR Lee, JJ Figiel, SJ Hearne, GA Petersen, SM Myers
Applied Physics Letters 78 (1), 67-69, 2001
1442001
Observation of the interfacial-field-induced weak antilocalization in InAs quantum structures
GL Chen, J Han, TT Huang, S Datta, DB Janes
Physical Review B 47 (7), 4084, 1993
1371993
Zinc‐blende MnTe: Epilayers and quantum well structures
SM Durbin, J Han, S O, M Kobayashi, DR Menke, RL Gunshor, Q Fu, ...
Applied physics letters 55 (20), 2087-2089, 1989
1281989
Cantilever epitaxial process
CI Ashby, DM Follstaedt, CC Mitchell, J Han
US Patent 6,599,362, 2003
1222003
Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures
SJ Hearne, J Han, SR Lee, JA Floro, DM Follstaedt, E Chason, IST Tsong
Applied Physics Letters 76 (12), 1534-1536, 2000
1222000
290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles
K Davitt, YK Song, WR Patterson, AV Nurmikko, M Gherasimova, J Han, ...
Optics express 13 (23), 9548-9555, 2005
1202005
Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
M Diagne, Y He, H Zhou, E Makarona, AV Nurmikko, J Han, KE Waldrip, ...
Applied Physics Letters 79 (22), 3720-3722, 2001
1142001
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Articles 1–20